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Publications in Math-Net.Ru |
Citations |
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2019 |
1. |
A. S. Puzanov, M. M. Venediktov, S. V. Obolensky, V. A. Kozlov, “Computational and experimental simulation of static memory cells of submicron microcircuits under the effect of neutron fluxes”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1250–1256 ; Semiconductors, 53:9 (2019), 1222–1228 |
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2018 |
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M. M. Venediktov, E. A. Tarasova, A. D. Bozhen'kina, S. V. Obolensky, V. V. Elesin, G. V. Chukov, I. O. Metelkin, M. A. Krevskiy, D. I. Dyukov, A. G. Fefelov, “Analysis of the behavior of nonequilibrium semiconductor structures and microwave transistors during and after pulsed $\gamma$- and $\gamma$-neutron irradiation”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1414–1420 ; Semiconductors, 52:12 (2018), 1518–1524 |
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Organisations |
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