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Publications in Math-Net.Ru |
Citations |
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2019 |
| 1. |
M. N. Drozdov, E. V. Demidov, Yu. N. Drozdov, S. A. Kraev, V. I. Shashkin, E. A. Arkhipova, M. A. Lobaev, A. L. Vikharev, A. M. Gorbachev, D. B. Radishev, V. A. Isaev, S. A. Bogdanov, “Formation of low-resistivity Au/Mo/Ti ohmic contacts to $p$-diamond epitaxial layers”, Zhurnal Tekhnicheskoi Fiziki, 89:12 (2019), 1923–1932   ; Tech. Phys., 64:12 (2019), 1827–1836 |
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| 2. |
E. A. Arkhipova, E. V. Demidov, M. N. Drozdov, S. A. Kraev, V. I. Shashkin, M. A. Lobaev, A. L. Vikharev, A. M. Gorbachev, D. B. Radishev, V. A. Isaev, S. A. Bogdanov, “Ohmic contacts to CVD diamond with boron-doped $\delta$ layers”, Fizika i Tekhnika Poluprovodnikov, 53:10 (2019), 1386–1390 ; Semiconductors, 53:10 (2019), 1348–1352 |
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2017 |
| 3. |
P. A. Bushuikin, A. V. Novikov, B. A. Andreev, D. N. Lobanov, P. A. Yunin, E. V. Skorokhodov, L. V. Krasil’nikova, E. V. Demidov, G. M. Savchenko, V. Yu. Davydov, “Specific features of the photoexcitation spectra of epitaxial InN layers grown by molecular-beam epitaxy with the plasma activation of nitrogen”, Fizika i Tekhnika Poluprovodnikov, 51:12 (2017), 1594–1598 ; Semiconductors, 51:12 (2017), 1537–1541 |
| 4. |
E. A. Surovegina, E. V. Demidov, M. N. Drozdov, A. V. Murel, O. I. Khrykin, V. I. Shashkin, M. A. Lobaev, A. M. Gorbachev, A. L. Viharev, S. A. Bogdanov, V. A. Isaev, A. B. Muchnikov, V. V. Chernov, D. B. Radishev, J. E. Batler, “Erratum to: “Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron””, Fizika i Tekhnika Poluprovodnikov, 51:8 (2017), 1151 ; Semiconductors, 51:8 (2017), 1106 |
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2016 |
| 5. |
E. A. Surovegina, E. V. Demidov, M. N. Drozdov, A. V. Murel, O. I. Khrykin, V. I. Shashkin, M. A. Lobaev, A. M. Gorbachev, A. L. Vikharev, S. A. Bogdanov, V. A. Isaev, A. B. Muchnikov, V. V. Chernov, D. B. Radishev, D. E. Batler, “Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1595–1598 ; Semiconductors, 50:12 (2016), 1569–1573 |
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| 6. |
V. M. Daniltsev, E. V. Demidov, M. N. Drozdov, Yu. N. Drozdov, S. A. Kraev, E. A. Surovegina, V. I. Shashkin, P. A. Yunin, “Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1459–1462 ; Semiconductors, 50:11 (2016), 1439–1442 |
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