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Publications in Math-Net.Ru |
Citations |
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2021 |
1. |
S. A. Kukushkin, Sh. Sh. Sharofidinov, A. V. Osipov, A. S. Grashchenko, A. V. Kandakov, E. V. Osipova, K. P. Kotlyar, E. V. Ubyivovk, “Self-organization of the composition of Al$_{x}$Ga$_{1-x}$N films grown on hybrid SiC/Si substrates”, Fizika Tverdogo Tela, 63:3 (2021), 363–369 ; Phys. Solid State, 63:3 (2021), 442–448 |
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2. |
D. A. Indeitsev, E. V. Osipova, “An analysis of the hydrogen embrittlement resistance of aluminum alloys”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:4 (2021), 15–18 ; Tech. Phys. Lett., 47:2 (2021), 170–173 |
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2019 |
3. |
D. A. Indeitsev, E. V. Osipova, “The effect of hydrogen on fluctuation embrittlement of aluminum”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:17 (2019), 31–34 ; Tech. Phys. Lett., 45:9 (2019), 882–885 |
3
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2018 |
4. |
A. S. Grashchenko, S. A. Kukushkin, V. I. Nikolaev, A. V. Osipov, E. V. Osipova, I. P. Soshnikov, “Study of the anisotropic elastoplastic properties of $\beta$-Ga$_{2}$O$_{3}$ films synthesized on SiC/Si substrates”, Fizika Tverdogo Tela, 60:5 (2018), 851–856 ; Phys. Solid State, 60:5 (2018), 852–857 |
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2016 |
5. |
S. A. Kukushkin, V. I. Nikolaev, A. V. Osipov, E. V. Osipova, A. I. Pechnikov, N. A. Feoktistov, “Epitaxial gallium oxide on a SiC/Si substrate”, Fizika Tverdogo Tela, 58:9 (2016), 1812–1817 ; Phys. Solid State, 58:9 (2016), 1876–1881 |
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Organisations |
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