|
|
|
Publications in Math-Net.Ru |
Citations |
|
2021 |
| 1. |
V. A. Morozov, A. G. Zegrya, G. G. Zegrya, G. G. Savenkov, “Piezoelectric properties of porous silicon”, Pis'ma v Zh. Èksper. Teoret. Fiz., 114:10 (2021), 680–684  ; JETP Letters, 114:10 (2021), 625–629   |
1
|
| 2. |
G. G. Zegrya, E. V. Shashkov, A. A. Karpova, N. S. Vorobiev, V. M. Freiman, A. G. Zegrya, Yu. S. Solomonov, “Laser effect in the explosion of porous silicon”, Pis'ma v Zh. Èksper. Teoret. Fiz., 114:4 (2021), 263–268 ; JETP Letters, 114:4 (2021), 227–231 |
1
|
| 3. |
G. G. Zegrya, V. P. Ulin, A. G. Zegrya, N. V. Ulin, V. M. Fraiman, Yu. M. Mikhailov, “Erratum to: Effect of Conductivity Type and Doping Level of Silicon Crystals on the Size of Formed Pore Channels during Anodic Etching in Hydrofluoric Acid Solutions”, Tech. Phys., 66:2 (2021), 367 |
|
2020 |
| 4. |
G. G. Zegrya, G. G. Savenkov, A. G. Zegrya, V. A. Bragin, I. A. Oskin, U. M. Poberezhnaya, “Laser initiation of energy-saturated composites based on nanoporous silicon”, Zhurnal Tekhnicheskoi Fiziki, 90:10 (2020), 1708–1714  ; Tech. Phys., 65:10 (2020), 1636–1642 |
4
|
|
2019 |
| 5. |
G. G. Zegrya, V. P. Ulin, A. G. Zegrya, N. V. Ulin, V. M. Freiman, Yu. M. Mikhailov, “Effect of conductivity type and doping level of silicon crystals on the size of formed pore channels during anodic etching in hydrofluoric acid solutions”, Zhurnal Tekhnicheskoi Fiziki, 89:10 (2019), 1575–1584 ; Tech. Phys., 64:10 (2019), 1492–1500 |
6
|
| 6. |
G. G. Savenkov, A. G. Zegrya, G. G. Zegrya, B. V. Rumyantsev, A. B. Sinani, Yu. M. Mikhailov, “The possibilities of energy-saturated nanoporous silicon-based composites (review and new results)”, Zhurnal Tekhnicheskoi Fiziki, 89:3 (2019), 397–403 ; Tech. Phys., 64:3 (2019), 361–367 |
9
|
| 7. |
A. G. Zegrya, V. V. Sokolov, G. G. Zegrya, Yu. V. Ganin, Yu. M. Mikhailov, “The effect of the doping level of starting silicon single crystals on structural parameters of porous silicon produced by electrochemical etching”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019), 3–6 ; Tech. Phys. Lett., 45:11 (2019), 1067–1070 |
2
|
|
2018 |
| 8. |
N. V. Pavlov, G. G. Zegrya, A. G. Zegrya, V. E. Bugrov, “Intraband radiation absorption by holes in InAsSb/AlSb and InGaAsP/InP quantum wells”, Fizika i Tekhnika Poluprovodnikov, 52:2 (2018), 207–220 ; Semiconductors, 52:2 (2018), 195–208 |
2
|
| 9. |
D. M. Samosvat, O. P. Chikalova-Luzina, V. S. Khromov, A. G. Zegrya, G. G. Zegrya, “The mechanism of generation of singlet oxygen in the presence of excited nanoporous silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:11 (2018), 53–62 ; Tech. Phys. Lett., 44:6 (2018), 479–482 |
4
|
|
2017 |
| 10. |
G. G. Zegrya, G. G. Savenkov, V. A. Morozov, A. G. Zegrya, N. V. Ulin, V. P. Ulin, A. A. Lukin, V. A. Bragin, I. A. Oskin, Yu. M. Mikhailov, “Sensitivity of energy-packed compounds based on superfine and nanoporous silicon to pulsed electrical treatments”, Fizika i Tekhnika Poluprovodnikov, 51:4 (2017), 501–506 ; Semiconductors, 51:4 (2017), 477–482 |
6
|
| 11. |
G. G. Savenkov, A. F. Kardo-Sisoev, A. G. Zegrya, I. A. Oskin, V. A. Bragin, G. G. Zegrya, “Initiation of explosive conversions in energy-saturated nanoporous silicon-based compounds with fast semiconductor switches and energy-releasing elements”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:19 (2017), 57–63 ; Tech. Phys. Lett., 43:10 (2017), 896–898 |
2
|
|
| Organisations |
|
| |
|
|
Contact us: