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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
I. E. Tyschenko, M. Voelskow, Si. Zh, V. P. Popov, “Diffusion of In atoms in SiO$_{2}$ films implanted with As$^{+}$ ions”, Fizika i Tekhnika Poluprovodnikov, 55:3 (2021), 217–223   ; Semiconductors, 55:3 (2021), 289–295 |
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2019 |
| 2. |
I. E. Tyschenko, V. A. Volodin, V. P. Popov, “Raman scattering in InSb spherical nanocrystals ion-synthesized in silicon-oxide films”, Fizika i Tekhnika Poluprovodnikov, 53:4 (2019), 502–507 ; Semiconductors, 53:4 (2019), 493–498 |
9
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| 3. |
I. E. Tyschenko, E. D. Zhanaev, V. P. Popov, “Bonding energy of silicon and sapphire wafers at elevated temperatures of joining”, Fizika i Tekhnika Poluprovodnikov, 53:1 (2019), 65–69 ; Semiconductors, 53:1 (2019), 60–64 |
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2018 |
| 4. |
K. V. Feklistov, A. G. Cherkov, V. P. Popov, L. I. Fedina, “Redistribution of erbium and oxygen recoil atoms and the structure of silicon thin surface layers formed by high-dose argon implantation through Er and SiO$_{2}$ surface films”, Fizika i Tekhnika Poluprovodnikov, 52:13 (2018), 1589–1596 ; Semiconductors, 52:13 (2018), 1696–1703 |
| 5. |
V. P. Popov, V. A. Antonov, V. I. Vdovin, “Positive charge in SOS heterostructures with interlayer silicon oxide”, Fizika i Tekhnika Poluprovodnikov, 52:10 (2018), 1220–1227 ; Semiconductors, 52:10 (2018), 1341–1348 |
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2016 |
| 6. |
V. P. Popov, M. A. Ilnitskii, E. D. Zhanaev, A. V. Myakon'kikh, K. V. Rudenko, A. V. Glukhov, “Biosensor properties of SOI nanowire transistors with a PEALD Al$_{2}$O$_{3}$ dielectric protective layer”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 643–649 ; Semiconductors, 50:5 (2016), 632–638 |
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1986 |
| 7. |
R. Grettsshel', A. V. Dvurechenskii, V. P. Popov, “Crystalline-amorphous phase transition in heavily doped silicon”, Fizika Tverdogo Tela, 28:10 (1986), 3134–3136 |
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