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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 5, Pages 643–649
(Mi phts6466)
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This article is cited in 15 scientific papers (total in 15 papers)
Semiconductor physics
Biosensor properties of SOI nanowire transistors with a PEALD Al$_{2}$O$_{3}$ dielectric protective layer
V. P. Popova, M. A. Ilnitskiia, E. D. Zhanaeva, A. V. Myakon'kikhb, K. V. Rudenkob, A. V. Glukhovc a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Insitute of Physics and Technology, Institution of Russian Academy of Sciences, Moscow
c Novosibirsk Semiconductor Device Plant and Design Bureau, Novosibirsk
Abstract:
The properties of protective dielectric layers of aluminum oxide Al$_{2}$O$_{3}$ applied to prefabricated silicon-nanowire transistor biochips by the plasma enhanced atomic layer deposition (PEALD) method before being housed are studied depending on the deposition and annealing modes. Coating the natural silicon oxide with a nanometer Al$_{2}$O$_{3}$ layer insignificantly decreases the femtomole sensitivity of biosensors, but provides their stability in bioliquids. In deionized water, transistors with annealed aluminum oxide are closed due to the trapping of negative charges of $<$ (1–10) $\times$ 10$^{11}$ cm$^{-2}$ at surface states. The application of a positive potential to the substrate ($V_{\mathrm{sub}}$ $>$ 25 V) makes it possible to eliminate the negative charge and to perform multiple measurements in liquid at least for half a year.
Keywords:
Atomic Layer Deposition, Bovine Serum Albumin Molecule, Bovine Serum Albumin Concentration, Drain Characteristic, Atomic Layer Deposition Process.
Received: 12.08.2015 Accepted: 08.09.2015
Citation:
V. P. Popov, M. A. Ilnitskii, E. D. Zhanaev, A. V. Myakon'kikh, K. V. Rudenko, A. V. Glukhov, “Biosensor properties of SOI nanowire transistors with a PEALD Al$_{2}$O$_{3}$ dielectric protective layer”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 643–649; Semiconductors, 50:5 (2016), 632–638
Linking options:
https://www.mathnet.ru/eng/phts6466 https://www.mathnet.ru/eng/phts/v50/i5/p643
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Abstract page: | 36 | Full-text PDF : | 10 |
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