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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
M. V. Dorokhin, M. S. Boldin, E. A. Uskova, A. V. Boryakov, P. B. Demina, I. V. Erofeeva, A. V. Zdoroveyshchev, V. E. Kotomina, Yu. M. Kuznetsov, E. A. Lantsev, A. A. Popov, V. N. Trushin, “Formation of a fine Si$_{1-x}$Ge$_{x}$ thermoelectric by electro-pulse plasma sintering”, Zhurnal Tekhnicheskoi Fiziki, 91:12 (2021), 1975–1983   |
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2020 |
| 2. |
M. V. Dorokhin, P. B. Demina, Yu. M. Kuznetsov, I. V. Erofeeva, A. V. Zdoroveyshchev, M. S. Boldin, E. A. Lantsev, A. A. Popov, E. A. Uskova, V. N. Trushin, “Nanostructured SiGe:Sb solid solutions with improved thermoelectric figure of merit”, Nanosystems: Physics, Chemistry, Mathematics, 11:6 (2020), 680–684  |
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| 3. |
A. M. Bragov, V. N. Chuvil’deev, N. V. Melekhin, M. S. Boldin, V. V. Balandin, A. V. Nokhrin, A. A. Popov, “Experimental study of dynamic strength of aluminum oxide based fine-grained ceramics obtained by spark plasma sintering”, Prikl. Mekh. Tekh. Fiz., 61:3 (2020), 207–214 ; J. Appl. Mech. Tech. Phys., 61:3 (2020), 494–500 |
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2019 |
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M. V. Dorokhin, P. B. Demina, I. V. Erofeeva, A. V. Zdoroveyshchev, Yu. M. Kuznetsov, M. S. Boldin, A. A. Popov, E. A. Lantsev, A. V. Boryakov, “In-situ doping of thermoelectric materials based on SiGe solid solutions during their synthesis by the spark plasma sintering technique”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1182–1188 ; Semiconductors, 53:9 (2019), 1158–1163 |
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2018 |
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M. V. Dorokhin, I. V. Erofeeva, Yu. M. Kuznetsov, M. V. Boldin, A. V. Boryakov, A. A. Popov, E. A. Lantsev, N. V. Sakharov, P. B. Demina, A. V. Zdoroveyshchev, V. N. Trushin, “Investigation of the initial stages of spark-plasma sintering of Si-Ge based thermoelectric materials”, Nanosystems: Physics, Chemistry, Mathematics, 9:5 (2018), 622–630 |
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| 6. |
I. V. Erofeeva, M. V. Dorokhin, A. V. Zdoroveyshchev, Yu. M. Kuznetsov, A. A. Popov, E. A. Lantsev, A. V. Boryakov, V. E. Kotomina, “Production of Si- and Ge-based thermoelectric materials by spark plasma sintering”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1455–1459 ; Semiconductors, 52:12 (2018), 1559–1563 |
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