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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
P. V. Seredin, A. S. Len'shin, Abduljabbar Riyad Khuder, D. L. Goloshchapov, M. A. Kharajidi, I. N. Arsent'ev, I. A. Kasatkin, “Properties of compliant porous silicon-based substrates formed by two-stage etching”, Fizika i Tekhnika Poluprovodnikov, 55:11 (2021), 1021–1026   |
| 2. |
P. V. Seredin, K. A. Barkov, D. L. Goloshchapov, A. S. Len'shin, Yu. Yu. Khudyakov, I. N. Arsent'ev, A. A. Lebedev, Sh. Sh. Sharofidinov, A. M. Mizerov, I. A. Kasatkin, T. Prutskij, “Effect of pretreatment of the silicon substrate on the properties of GaN films grown by chloride–hydride vapor-phase epitaxy”, Fizika i Tekhnika Poluprovodnikov, 55:8 (2021), 704–710 ; Semiconductors, 55:12 (2021), 995–1001 |
| 3. |
P. V. Seredin, D. L. Goloshchapov, Yu. Yu. Khudyakov, I. N. Arsent'ev, D. N. Nikolaev, N. A. Pikhtin, S. O. Slipchenko, H. Leiste, “Structural and spectroscopic studies of epitaxial GaAs layers grown on compliant substrates based on a superstructure layer and protoporous silicon”, Fizika i Tekhnika Poluprovodnikov, 55:1 (2021), 86–95 ; Semiconductors, 55:1 (2021), 122–131 |
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| 4. |
P. V. Seredin, D. L. Goloshchapov, I. N. Arsent'ev, D. N. Nikolaev, N. A. Pikhtin, S. O. Slipchenko, “Spectroscopic studies of integrated GaAs/Si heterostructures”, Fizika i Tekhnika Poluprovodnikov, 55:1 (2021), 34–40 ; Semiconductors, 55:1 (2021), 44–50 |
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2020 |
| 5. |
P. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, A. S. Len'shin, Yu. Yu. Khudyakov, A. M. Mizerov, S. N. Timoshnev, I. N. Arsent'ev, A. N. Beltyukov, Harald Leiste, S. A. Kukushkin, “Influence of a nanoporous silicon layer on the practical implementation and specific features of the epitaxial growth of GaN layers on SiC/$por$-Si/$c$-Si templates”, Fizika i Tekhnika Poluprovodnikov, 54:5 (2020), 491–503 ; Semiconductors, 54:5 (2020), 596–608 |
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| 6. |
P. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, A. S. Len'shin, A. M. Mizerov, S. N. Timoshnev, E. V. Nikitina, I. N. Arsent'ev, S. A. Kukushkin, “Optical properties of GaN/SiC/$por$-Si/Si(111) hybrid heterostructures”, Fizika i Tekhnika Poluprovodnikov, 54:4 (2020), 346–354 ; Semiconductors, 54:4 (2020), 417–425 |
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2019 |
| 7. |
P. V. Seredin, A. V. Fedyukin, V. A. Terekhov, K. A. Barkov, I. N. Arsent'ev, A. D. Bondarev, E. V. Fomin, N. A. Pikhtin, “On the phase composition, morphology, and optical and electronic characteristics of AlN nanofilms grown on misoriented GaAs (100) substrates”, Fizika i Tekhnika Poluprovodnikov, 53:11 (2019), 1584–1592 ; Semiconductors, 53:11 (2019), 1550–1557 |
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| 8. |
P. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, A. S. Len'shin, A. M. Mizerov, I. N. Arsent'ev, Harald Leiste, Monika Rinke, “Structural and morphological properties of hybrid heterostructures based on gan grown on a compliant por-Si(111) substrate”, Fizika i Tekhnika Poluprovodnikov, 53:8 (2019), 1141–1151 ; Semiconductors, 53:8 (2019), 1120–1130 |
| 9. |
B. V. Sladkopevtsev, G. I. Kotov, I. N. Arsent'ev, I. S. Shashkin, I. Ya. Mittova, E. V. Tomina, A. A. Samsonov, P. V. Kostenko, “Investigation of the current–voltage characteristics of new MnO$_{2}$/GaAs(100) and V$_{2}$O$_{5}$/GaAs(100) heterostructures subjected to heat treatment”, Fizika i Tekhnika Poluprovodnikov, 53:8 (2019), 1074–1079 ; Semiconductors, 53:8 (2019), 1054–1059 |
| 10. |
P. V. Seredin, A. S. Len'shin, D. S. Zolotukhin, D. L. Goloshchapov, A. M. Mizerov, I. N. Arsent'ev, A. N. Beltyukov, “Comprehensive study of the nanoporous si layer influence on atomic and electron structure and optical properties of A$^{\mathrm{III}}$N/por-Si heterostructures grown by plasma assisted molecular beam epitaxy”, Fizika i Tekhnika Poluprovodnikov, 53:7 (2019), 1010–1016 ; Semiconductors, 53:7 (2019), 993–999 |
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| 11. |
P. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, A. S. Len'shin, A. N. Lukin, A. M. Mizerov, E. V. Nikitina, I. N. Arsent'ev, Harald Leiste, Monika Rinke, “Influence of a por-Si buffer layer on the optical properties of epitaxial In$_{x}$Ga$_{1-x}$N/Si(111) heterostructures with a nanocolumnar film morphology”, Fizika i Tekhnika Poluprovodnikov, 53:1 (2019), 70–76 ; Semiconductors, 53:1 (2019), 65–71 |
| 12. |
P. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, A. S. Len'shin, A. M. Mizerov, I. N. Arsent'ev, H. Leiste, M. Rinke, “Electronic and optical properties of hybrid GaN/por-Si(111) heterostructures”, Kvantovaya Elektronika, 49:6 (2019), 545–551 [Quantum Electron., 49:6 (2019), 545–551   ] |
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2018 |
| 13. |
P. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, M. A. Kondrashin, A. S. Len'shin, Yu. Yu. Khudyakov, A. M. Mizerov, I. N. Arsent'ev, A. N. Beltyukov, Harald Leiste, M. Rinke, “Effect of a $por$-Si buffer layer on the structure and morphology of epitaxial In$_{x}$Ga$_{1-x}$N/Si(111) heterostructures”, Fizika i Tekhnika Poluprovodnikov, 52:13 (2018), 1553–1562 ; Semiconductors, 52:13 (2018), 1653–1661 |
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| 14. |
P. V. Seredin, A. S. Len'shin, A. V. Fedyukin, D. L. Goloshchapov, A. N. Lukin, I. N. Arsent'ev, A. V. Zhabotinsky, “Effect of conditions of electrochemical etching on the morphological, structural, and optical properties of porous gallium arsenide”, Fizika i Tekhnika Poluprovodnikov, 52:9 (2018), 1041–1048 ; Semiconductors, 52:9 (2018), 1163–1170 |
| 15. |
P. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, A. S. Len'shin, A. N. Lukin, Yu. Yu. Khudyakov, I. N. Arsent'ev, A. V. Zhabotinsky, D. N. Nikolaev, N. A. Pikhtin, “Effect of misorientation and preliminary etching of the substrate on the structural and optical properties of integrated GaAs/Si(100) heterostructures produced by vapor phase epitaxy”, Fizika i Tekhnika Poluprovodnikov, 52:8 (2018), 881–890 ; Semiconductors, 52:8 (2018), 1012–1021 |
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| 16. |
P. V. Seredin, A. S. Len'shin, A. V. Fedyukin, I. N. Arsent'ev, A. V. Zhabotinsky, D. N. Nikolaev, Harald Leiste, Monika Rinke, “Influence of substrate misorientation on the composition and the structural and photoluminescence properties of epitaxial layers grown on GaAs(100)”, Fizika i Tekhnika Poluprovodnikov, 52:1 (2018), 118–124 ; Semiconductors, 52:1 (2018), 112–117 |
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2017 |
| 17. |
P. V. Seredin, D. L. Goloshchapov, A. S. Len'shin, A. N. Lukin, Yu. Yu. Khudyakov, I. N. Arsent'ev, T. Prutskij, “Experimental studies of the effects of atomic ordering in epitaxial Ga$_{x}$In$_{1-x}$P on their optical properties”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1160–1167 ; Semiconductors, 51:9 (2017), 1111–1118 |
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| 18. |
P. V. Seredin, A. S. Len'shin, Yu. Yu. Khudyakov, I. N. Arsent'ev, N. A. Kalyuzhnyy, S. A. Mintairov, D. N. Nikolaev, T. Prutskij, “Experimental studies of the effects of atomic ordering in epitaxial Ga$_{x}$In$_{1-x}$P alloys on their structural and morphological properties”, Fizika i Tekhnika Poluprovodnikov, 51:8 (2017), 1131–1137 ; Semiconductors, 51:8 (2017), 1087–1092 |
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| 19. |
P. V. Seredin, A. S. Len'shin, I. N. Arsent'ev, A. V. Zhabotinsky, D. N. Nikolaev, I. S. Tarasov, V. V. Shamakhov, Tatiana Prutskij, Harald Leiste, Monika Rinke, “Epitaxial Al$_{x}$Ga$_{1-x}$As : Mg alloys with different conductivity types”, Fizika i Tekhnika Poluprovodnikov, 51:1 (2017), 124–132 ; Semiconductors, 51:1 (2017), 122–130 |
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2016 |
| 20. |
P. V. Seredin, D. A. Goloshchapov, A. S. Len'shin, A. N. Lukin, A. V. Fedyukin, I. N. Arsent'ev, A. D. Bondarev, Ya. V. Lubyanskiy, I. S. Tarasov, “Growth features and spectroscopic structure investigations of nanoprofiled AlN films formed on misoriented GaAs substrates”, Fizika i Tekhnika Poluprovodnikov, 50:9 (2016), 1283–1294 ; Semiconductors, 50:9 (2016), 1261–1272 |
| 21. |
P. V. Seredin, A. V. Fedyukin, I. N. Arsent'ev, L. S. Vavilova, I. S. Tarasov, Tatiana Prutskij, Harald Leiste, Monika Rinke, “Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 869–876 ; Semiconductors, 50:7 (2016), 853–859 |
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1989 |
| 22. |
I. N. Arsent'ev, G. R. Bezhanishvili, P. P. Buinov, L. S. Vavilova, N. A. Strugov, V. P. Chalyi, A. P. Shkurko, “SPECTRAL CHARACTERISTICS OF INGAASP/GAAS(111) LPE-LASERS
(LAMBDA=0.8MU-M) DESIGNED FOR THE PUMPING OF YAG-ND3+”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:15 (1989), 45–49 |
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1988 |
| 23. |
Zh. I. Alfrove, N. Yu. Antonishkis, I. N. Arsent'ev, D. Z. Garbuzov, V. I. Kolyshkin, T. A. Nalet, N. A. Strugov, A. V. Tikunov, “Квантово-размерные
InGaAsP/GaAs (${\lambda=0.86\div0.78}$ мкм) лазеры раздельного ограничения
(${J_{\text{п}}=100\,\text{А/см}^{2}}$, КПД${}=59$%)”, Fizika i Tekhnika Poluprovodnikov, 22:6 (1988), 1031–1034 |
| 24. |
N. Yu. Antonishkis, I. N. Arsent'ev, D. Z. Garbuzov, V. I. Kolyshkin, A. B. Komissarov, A. V. Kochergin, T. A. Nalet, N. A. Strugov, “POWER CONTINUOUS INGAASP/GAAS HETEROLASER WITH THE DIELECTRIC MIRROR
(IPOR=100A/CM2,D=1.1WATT,EFFICIENCY=66-PERCENT,T=10-DEGREES-C”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:8 (1988), 699–702 |
| 25. |
I. N. Arsent'ev, N. A. Bert, A. V. Vasil'ev, D. Z. Garbuzov, E. V. Zhuravkevich, S. G. Konnikov, A. O. Kosogov, A. V. Kochergin, N. N. Faleev, L. I. Flaks, “MULTI-LAYERED STRUCTURES IN THE JN-GA-AS-P SYSTEM PREPARED BY THE LIQUID
EPITAXY METHOD”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:7 (1988), 593–597 |
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1987 |
| 26. |
Z. I. Alferov, N. Yu. Antonishkis, I. N. Arsent'ev, D. Z. Garbuzov, A. V. Tikunov, V. B. Khalfin, “Low-Threshold Quantum-Dimensional InGaAsP/GaAs Double-Heterostructure Lasers of Separate Limitation Produced by Liquid
Epitaxy (${\lambda=0.86}$ $\mu m$, ${I_{\text{п}}=90\,\text{A/cm}^{2}}$, ${L=\infty}$; ${I_{\text{п}}=165\,\text{A/cm}^{2}}$, ${L=1150}$ $\mu m$, ${T=300}$ K)”, Fizika i Tekhnika Poluprovodnikov, 21:8 (1987), 1501–1503 |
| 27. |
I. N. Arsent'ev, N. Yu. Antonishkis, D. Z. Garbuzov, V. V. Krasovskii, A. B. Komissarov, V. B. Khalfin, “Quantum-Dimensional Effects in Liquid-Phase InGaAsP/GaAs Heterostructures with Active-Ran Thickness between 40 and 300 Å”, Fizika i Tekhnika Poluprovodnikov, 21:1 (1987), 178–181 |
| 28. |
Z. I. Alferov, N. Yu. Antonishkis, I. N. Arsent'ev, D. Z. Garbuzov, V. V. Krasovskii, A. V. Tikunov, V. B. Khalfin, “Quantum-Dimensional InGaAsP/GaAs Separate-Limitation Double-Heterostructure Lasers Produced by Liquid-Epitaxy Method (${\lambda=0.79}\,\mu m,$ ${I_{\text{п}}=124\,\text{A/cm}^{2}}$,
${T=300}$ K)”, Fizika i Tekhnika Poluprovodnikov, 21:1 (1987), 162–164 |
| 29. |
Zh. I. Alferov, I. N. Arsent'ev, D. Z. Garbuzov, N. A. Strugov, A. V. Tikunov, E. I. Chudinova, “Visible $In\,Ga\,As\,P/Ga\,As\,P$ separate confinement lasers, manufactured by the liquid epitaxy-method
($\lambda=0.65\div0.67$ mu-m, $I_n=3\div0.8\,\text{kA}/\text{cm}^{2}$; $P=5$ mVt, $\lambda=0.665$ mu-m, $T=300$ K)”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:6 (1987), 372–374 |
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1986 |
| 30. |
Z. I. Alferov, N. Yu. Antonishkis, I. N. Arsent'ev, D. Z. Garbuzov, V. V. Krasovskii, “Photoluminescence of InGaAsP/GaAs Quantum-Dimensional Heterostructures Produced by the Method of Liquid Epitaxy”, Fizika i Tekhnika Poluprovodnikov, 20:12 (1986), 2145–2149 |
| 31. |
N. Yu. Antonishkis, I. N. Arsent'ev, D. Z. Garbuzov, V. P. Evtikhiev, V. V. Krasovskii, A. E. Svetlokuzev, A. V. Chudinov, “Luminescence Efficiency and Boundary-Recombination Rate in Heteroslructures in Al$-$Ga$-$As and In$-$Ga$-$As$-$P”, Fizika i Tekhnika Poluprovodnikov, 20:4 (1986), 708–712 |
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1985 |
| 32. |
Z. I. Alferov, I. N. Arsent'ev, L. S. Vavilova, D. Z. Garbuzov, V. V. Krasovskii, A. V. Tikunov, V. P. Chalyi, “$0.677 \mu m$ – Continuous Injection InGaAsP/GaAsP DH Laser with Selective Limitation
Produced by Liquid Epitaxy”, Fizika i Tekhnika Poluprovodnikov, 19:6 (1985), 1115–1118 |
| 33. |
Z. I. Alferov, D. Z. Garbuzov, I. N. Arsent'ev, B. Ya. Ber, L. S. Vavilova, V. V. Krasovskii, A. V. Chudinov, “Auger Profiles of Composition and Luminescent Studies
of Liquid-Phase InGaAsP Heterostructures with Active Regions ${(1.5\div5)\cdot10^{-6}}$ cm”, Fizika i Tekhnika Poluprovodnikov, 19:6 (1985), 1108–1114 |
| 34. |
D. Z. Garbuzov, I. N. Arsent'ev, L. S. Vavilova, A. V. Tikunov, E. V. Tulashvili, “Continuous Separately-Limited Laser on InGaAsP/GaAs Double Heterostructures Grown by Liquid Epitay of 77 mWt Power
(${T=300}$ K, ${\lambda=0.87}$ $\mu$m)”, Fizika i Tekhnika Poluprovodnikov, 19:1 (1985), 136–138 |
| 35. |
Zh. I. Alferov, L. S. Vavilova, I. N. Arsent'ev, D. Z. Garbuzov, A. V. Tikunov, “Continuous short-wave ($\lambda=0,677\,\mu m$) injection-laser based on $In\,Ga\,As\,P/Ga\,As\,P$ RO DGS with $10$ mVt power”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:19 (1985), 1153–1157 |
| 36. |
Zh. I. Alferov, I. N. Arsent'ev, L. S. Vavilova, D. Z. Garbuzov, A. V. Tikunov, E. V. Tulashvili, “Band lasers based on PO $In\,Ga\,As\,P/Ga\,As$ DHS ($\lambda\simeq0.87\,\mu m$) with the thin active area”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:4 (1985), 205–209 |
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1984 |
| 37. |
Z. I. Alferov, I. N. Arsent'ev, D. Z. Garbuzov, V. P. Evtikhiev, O. V. Sulima, V. P. Chalyi, A. V. Chudinov, “Инжекционные РО InGaAsP/InP ДГС лазеры с порогом
$300\,\text{А/см}^{2}$ (четырехсколотые образцы,
${\lambda=1.25}$ мкм, ${T=300}$ K)”, Fizika i Tekhnika Poluprovodnikov, 18:11 (1984), 2057–2060 |
| 38. |
D. Z. Garbuzov, I. N. Arsent'ev, V. P. Chalyi, A. V. Chudinov, V. P. Evtikhiev, V. B. Khalfin, “Спонтанные и когерентные излучательные переходы в InGaAsP/InP ДГС
с тонкой активной областью
(${d_{\text{а}}=2\cdot10^{-5}\div2\cdot10^{-6}}$ см), полученные методом
жидкостной эпитаксии”, Fizika i Tekhnika Poluprovodnikov, 18:11 (1984), 2041–2045 |
| 39. |
Z. I. Alferov, I. N. Arsent'ev, L. S. Vavilova, D. Z. Garbuzov, V. V. Krasovskii, “Низкопороговые инжекционные
InGaAsP/GaAs ДГС лазеры с раздельным ограничением, полученные методом
жидкостной эпитаксии
(${\lambda=0.78\div0.87}$ мкм, ${I_{\text{пор}}=460\,\text{А/см}^{2}}$,
${T=300}$ K)”, Fizika i Tekhnika Poluprovodnikov, 18:9 (1984), 1655–1659 |
| 40. |
Zh. I. Alferov, I. N. Arsent'ev, L. S. Vavilova, D. Z. Garbuzov, A. V. Tikunov, R. S. Ignatkina, “Low-Threshold Visible GalnAsP/GaAsP DH Lasers (${T=300}$ K, ${\lambda=0.70{-}0.66}\,\mu m,$
${I_{\text{thresh}}\simeq1.5{-}3.2\,\text{кА}/\text{cm}^{2}}$)”, Fizika i Tekhnika Poluprovodnikov, 18:4 (1984), 757–758 |
| 41. |
Zh. I. Alferov, I. N. Arsent'ev, L. S. Vavilova, D. Z. Garbuzov, E. V. Tulashvili, “Visible Low-Threshold Pulsed and Continuous InGaAsP/InGaP/GaAs DH Lasers
in the $0.73{-}0.79 \mu m$ Region (${T=300}$ K, ${I_{n}=3.5{-}1.3\,\text{mA}/\text{cm}^{2}}$)”, Fizika i Tekhnika Poluprovodnikov, 18:1 (1984), 162–165 |
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1983 |
| 42. |
I. N. Arsent'ev, L. S. Vavilova, D. Z. Garbuzov, E. V. Tulashvili, “Температурная зависимость порога генерации
в ДГ-InGaAsP/GaAs-структурах
(${\lambda_{\text{ген}}=729}$ нм, ${T\geqslant300}$ K,
${J_{\text{пор}}\geqslant5\cdot10^{3}\,\text{А/см}^{2}}$)”, Fizika i Tekhnika Poluprovodnikov, 17:5 (1983), 843–846 |
| 43. |
A. V. Chudinov, V. P. Chalyi, D. Z. Garbuzov, I. N. Arsent'ev, V. P. Evtikhiev, “Фотолюминесцентные исследования перераспределения неравновесных
носителей заряда в InGaAsP/InP с двумя активными областями”, Fizika i Tekhnika Poluprovodnikov, 17:4 (1983), 714–717 |
| 44. |
D. Z. Garbuzov, V. B. Khalfin, E. V. Tulashvili, I. N. Arsent'ev, L. S. Vavilova, “Фотолюминесценция двойной гетероструктуры при возбуждении
широкозонного эмиттера”, Fizika i Tekhnika Poluprovodnikov, 17:2 (1983), 242–246 |
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