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Publications in Math-Net.Ru |
Citations |
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2022 |
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R. Kh. Zhukavin, P. A. Bushuikin, V. D. Kukotenko, Yu. Yu. Choporova, N. Deßmann, K. A. Kovalevsky, V. V. Tsyplenkov, V. V. Gerasimov, B. A. Knyazev, N. V. Abrosimov, V. N. Shastin, “Detection of Ramsey oscillations in germanium doped with shallow donors upon the excitation of the $1s\to2p_0$ transition”, Pis'ma v Zh. Èksper. Teoret. Fiz., 116:3 (2022), 139–145  ; JETP Letters, 116:3 (2022), 137–143 |
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2020 |
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R. Kh. Zhukavin, K. A. Kovalevsky, S. G. Pavlov, N. Deßmann, A. Pohl, V. V. Tsyplenkov, N. V. Abrosimov, H. Riemann, H.-W. Hübers, V. N. Shastin, “Frequency tuning of terahertz stimulated emission under the intracenter optical excitation of uniaxially stressed Si:Bi”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 816–821  ; Semiconductors, 54:8 (2020), 969–974 |
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2017 |
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R. Kh. Zhukavin, K. A. Kovalevskii, S. M. Sergeev, Yu. Yu. Choporova, V. V. Gerasimov, V. V. Tsyplenkov, B. A. Knyazev, N. V. Abrosimov, S. G. Pavlov, V. N. Shastin, H. Schneider, N. Deßmann, O. A. Shevchenko, N. A. Vinokurov, G. N. Kulipanov, H.-W. Hübers, “Low-temperature intracenter relaxation times of shallow donors in germanium”, Pis'ma v Zh. Èksper. Teoret. Fiz., 106:9 (2017), 555–560 ; JETP Letters, 106:9 (2017), 571–575   |
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2016 |
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R. Kh. Zhukavin, K. A. Kovalevsky, M. L. Orlov, V. V. Tsyplenkov, H.-W. Hübers, N. Dessmann, D. V. Kozlov, V. N. Shastin, “Terahertz absorption and emission upon the photoionization of acceptors in uniaxially stressed silicon”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1479–1483 ; Semiconductors, 50:11 (2016), 1458–1462 |
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