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Zhukavin, Roman Khuseinovich
Statistics Math-Net.Ru
Total publications: 15
Scientific articles: 15

Number of views:
This page:133
Abstract pages:1304
Full texts:347
References:182
Candidate of physico-mathematical sciences
E-mail:
Keywords: silicon, germanium, donors, acceptors, SRS

Subject:

semicondutors, lasers? donors, acceptors, quantum optics of impurity centers, pump-probe techniqueá, spectroscopy
   
Main publications:
  1. Pavlov, S. G., Deßmann, N., Pohl, A., Zhukavin, R. K., Klaassen, T. O., Abrosimov, N. V., ... & Hübers, H. W., “Terahertz transient stimulated emission from doped silicon”, APL Photonics, 5:10 (2020), 106102
  2. Zhukavin, R. K., Kovalevsky, K. A., Pavlov, S. G., Deßmann, N., Pohl, A., Tsyplenkov, V. V., ... & Shastin, V. N., “Frequency Tuning of Terahertz Stimulated Emission under the Intracenter Optical Excitation of Uniaxially Stressed Si: Bi.”, Semiconductors, 54:8 (2020), 969
  3. Zhukavin, R. K., Pavlov, S. G., Stavrias, N., Saeedi, K., Kovalevsky, K. A., Phillips, P. J., ... & Shastin, V. N., “Influence of uniaxial stress on phonon-assisted relaxation in bismuth-doped silicon”, Journal of Applied Physics, 127:3 (2020), 035706
  4. Zhukavin, R. K., Kovalevskii, K. A., Choporova, Y. Y., Tsyplenkov, V. V., Gerasimov, V. V., Bushuikin, P. A., ... & Shastin, V. N., “Relaxation times and population inversion of excited states of arsenic donors in germanium.”, JETP Letters, 110:10 (2019), 677
  5. S. G. Pavlov, N. Deßmann, B. Redlich, A. F. G. van der Meer, N. V. Abrosimov, H. Riemann, R. Kh. Zhukavin, V. N. Shastin, H.-W. Hübers, “Competing Inversion-Based Lasing and Raman Lasing in Doped Silicon”, Phys. Rev. X, 8 (2018), 041003

https://www.mathnet.ru/eng/person109850
List of publications on Google Scholar
List of publications on ZentralBlatt

Publications in Math-Net.Ru Citations
2023
1. R. Kh. Zhukavin, V. V. Tsyplenkov, V. N. Shastin, “The mechanism of stimulated Raman scattering of light in silicon doped with helium-like donors”, Kvantovaya Elektronika, 53:5 (2023),  401–405  mathnet [Bull. Lebedev Physics Institute, 50:suppl. 9 (2023), S1015–S1021]
2022
2. R. Kh. Zhukavin, P. A. Bushuikin, V. D. Kukotenko, Yu. Yu. Choporova, N. Deßmann, K. A. Kovalevsky, V. V. Tsyplenkov, V. V. Gerasimov, B. A. Knyazev, N. V. Abrosimov, V. N. Shastin, “Detection of Ramsey oscillations in germanium doped with shallow donors upon the excitation of the $1s\to2p_0$ transition”, Pis'ma v Zh. Èksper. Teoret. Fiz., 116:3 (2022),  139–145  mathnet; JETP Letters, 116:3 (2022), 137–143 1
2021
3. R. Kh. Zhukavin, “Terahertz stimulated emission under the optical resonant excitation of germanium doped with shallow donors”, Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  729–732  mathnet  elib; Semiconductors, 55:10 (2021), 804–807
2020
4. K. A. Kovalevsky, Yu. Yu. Choporova, R. Kh. Zhukavin, N. V. Abrosimov, S. G. Pavlov, H.-W. Hübers, V. V. Tsyplenkov, V. D. Kukotenko, B. A. Knyazev, V. N. Shastin, “Relaxation of the excited states of arsenic in strained germanium”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1145–1149  mathnet  elib; Semiconductors, 54:10 (2020), 1347–1351 1
5. R. Kh. Zhukavin, K. A. Kovalevsky, S. G. Pavlov, N. Deßmann, A. Pohl, V. V. Tsyplenkov, N. V. Abrosimov, H. Riemann, H.-W. Hübers, V. N. Shastin, “Frequency tuning of terahertz stimulated emission under the intracenter optical excitation of uniaxially stressed Si:Bi”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  816–821  mathnet  elib; Semiconductors, 54:8 (2020), 969–974 1
2019
6. R. Kh. Zhukavin, K. A. Kovalevskii, Yu. Yu. Choporova, V. V. Tsyplenkov, V. V. Gerasimov, P. A. Bushuikin, B. A. Knyazev, N. V. Abrosimov, S. G. Pavlov, H.-W. Hübers, V. N. Shastin, “Relaxation times and population inversion of excited states of arsenic donors in germanium”, Pis'ma v Zh. Èksper. Teoret. Fiz., 110:10 (2019),  677–682  mathnet  elib; JETP Letters, 110:10 (2019), 677–682  isi  scopus 13
7. R. Kh. Zhukavin, S. G. Pavlov, A. Pohl, N. V. Abrosimov, H. Riemann, B. Redlich, H.-W. Hübers, V. N. Shastin, “Stimulated terahertz emission of bismuth donors in uniaxially strained silicon under optical intracenter excitation”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1285–1288  mathnet  elib; Semiconductors, 53:9 (2019), 1255–1257
8. V. N. Shastin, R. Kh. Zhukavin, K. A. Kovalevsky, V. V. Tsyplenkov, V. V. Rumyantsev, D. V. Shengurov, S. G. Pavlov, V. B. Shuman, L. M. Portsel', A. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, J. M. Klopf, H.-W. Hübers, “Chemical shift and exchange interaction energy of the $1s$ states of magnesium donors in silicon. The possibility of stimulated emission”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1263–1266  mathnet  elib; Semiconductors, 53:9 (2019), 1234–1237 8
2017
9. R. Kh. Zhukavin, K. A. Kovalevskii, S. M. Sergeev, Yu. Yu. Choporova, V. V. Gerasimov, V. V. Tsyplenkov, B. A. Knyazev, N. V. Abrosimov, S. G. Pavlov, V. N. Shastin, H. Schneider, N. Deßmann, O. A. Shevchenko, N. A. Vinokurov, G. N. Kulipanov, H.-W. Hübers, “Low-temperature intracenter relaxation times of shallow donors in germanium”, Pis'ma v Zh. Èksper. Teoret. Fiz., 106:9 (2017),  555–560  mathnet  elib; JETP Letters, 106:9 (2017), 571–575  isi  scopus 15
2016
10. K. A. Kovalevsky, R. Kh. Zhukavin, V. V. Tsyplenkov, S. G. Pavlov, H.-W. Hübers, N. V. Abrosimov, V. N. Shastin, “Polarization of the induced THz emission of donors in silicon”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1701–1705  mathnet  elib; Semiconductors, 50:12 (2016), 1673–1677
11. A. N. Yablonskii, R. Kh. Zhukavin, N. A. Bekin, A. V. Novikov, D. V. Yurasov, M. V. Shaleev, “On the radiative recombination and tunneling of charge carriers in SiGe/Si heterostructures with double quantum wells”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1629–1633  mathnet  elib; Semiconductors, 50:12 (2016), 1604–1608
12. R. Kh. Zhukavin, K. A. Kovalevsky, M. L. Orlov, V. V. Tsyplenkov, H.-W. Hübers, N. Dessmann, D. V. Kozlov, V. N. Shastin, “Terahertz absorption and emission upon the photoionization of acceptors in uniaxially stressed silicon”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1479–1483  mathnet  elib; Semiconductors, 50:11 (2016), 1458–1462
13. A. V. Andrianov, A. O. Zahar'in, R. Kh. Zhukavin, V. N. Shastin, D. V. Shengurov, N. V. Abrosimov, “Terahertz emission at impurity electrical breakdown in Si(Li)”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:20 (2016),  18–23  mathnet  elib; Tech. Phys. Lett., 42:10 (2016), 1031–1033
2015
14. K. A. Kovalevsky, N. V. Abrosimov, R. Kh. Zhukavin, S. G. Pavlov, H. -W. Hübers, V. V. Tsyplenkov, V. N. Shastin, “Terahertz lasers based on intracentre transitions of group V donors in uniaxially deformed silicon”, Kvantovaya Elektronika, 45:2 (2015),  113–120  mathnet  elib [Quantum Electron., 45:2 (2015), 113–120  isi  scopus] 6
2014
15. A. V. Andrianov, A. O. Zahar'in, R. Kh. Zhukavin, V. N. Shastin, N. V. Abrosimov, A. V. Bobylev, “Terahertz intracenter photoluminescence of silicon with lithium at interband excitation”, Pis'ma v Zh. Èksper. Teoret. Fiz., 100:12 (2014),  876–880  mathnet  elib; JETP Letters, 100:12 (2014), 771–775  isi  elib  scopus 6

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