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Matematicheskoe modelirovanie, 2012, Volume 24, Number 12, Pages 23–28 (Mi mm3217)  
This article is cited in 5 scientific papers (total in 5 papers)

On self-organization processes of nanostructures on semiconductor surface by ion bombardment

N. A. Kudryashov, P. N. Ryabov, T. E. Fedyanin

National Research Nuclear University MEPHI, Moscow, Russia
Full-text PDF (355 kB) Citations (5)
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Abstract: The nanostructures self-organization process on semiconductor surfaces are considered. The mathematical model is formulated and numerical modeling of this process is carried out. The influence of high order terms on the evolution of surface morphology is studied. The defects of the surface morphology after oblique ion bombardment are classified.
Keywords: ion bombardment, dissipation, self-organization, nanostructure, substrate.
Received: 01.10.2012
Document Type: Article
UDC: 532.592; 517.953
Language: Russian
Citation: N. A. Kudryashov, P. N. Ryabov, T. E. Fedyanin, “On self-organization processes of nanostructures on semiconductor surface by ion bombardment”, Matem. Mod., 24:12 (2012), 23–28
Citation in format AMSBIB
\Bibitem{KudRyaFed12}
\by N.~A.~Kudryashov, P.~N.~Ryabov, T.~E.~Fedyanin
\paper On self-organization processes of nanostructures on semiconductor surface by ion bombardment
\jour Matem. Mod.
\yr 2012
\vol 24
\issue 12
\pages 23--28
\mathnet{http://mi.mathnet.ru/mm3217}
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    • This publication is cited in the following 5 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Математическое моделирование
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