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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2020, Volume 112, Issue 12, Pages 801–806
DOI: https://doi.org/10.31857/S1234567820240039
(Mi jetpl6323)
 

CONDENSED MATTER

Unoccupied atomic-like states of gaas

V. M. Mikoushkin

Ioffe Institute, Russian Academy of Sciences, St. Petersburg, 194021 Russia
References:
Abstract: The excitation spectrum of GaAs has been studied by reflection electron energy loss spectroscopy. In addition to dominant collective excitations, a series of single-electron transitions of a core Ga 3d electron to previously unknown unoccupied states located above the Fermi level by 1.25, 3.7, and 6.8 eV have been detected in the spectrum. It has been shown that the detected states appear near the ion core of Ga because of an increase in its effective charge at excitation. Since the detected electronic levels are equidistant, they can be described by a subnanometer spherical quantum dot model. It has been shown that one of the decay channels of the detected states involves the emission of ultraviolet radiation.
Funding agency Grant number
Russian Science Foundation 17-19-01200-П
This work was supported by the Russian Science Foundation (project no. 17-19-01200-P).
Received: 28.10.2020
Revised: 03.11.2020
Accepted: 06.11.2020
English version:
Journal of Experimental and Theoretical Physics Letters, 2020, Volume 112, Issue 12, Pages 764–768
DOI: https://doi.org/10.1134/S0021364020240078
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. M. Mikoushkin, “Unoccupied atomic-like states of gaas”, Pis'ma v Zh. Èksper. Teoret. Fiz., 112:12 (2020), 801–806; JETP Letters, 112:12 (2020), 764–768
Citation in format AMSBIB
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\pages 801--806
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    Письма в Журнал экспериментальной и теоретической физики Pis'ma v Zhurnal Иksperimental'noi i Teoreticheskoi Fiziki
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