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This article is cited in 1 scientific paper (total in 1 paper)
Surface physics, thin films
Weak antilocalization in thin films of the Bi$_{2}$Te$_{2.7}$Se$_{0.3}$ solid solution
N. A. Abdullaeva, O. Z. Alekperova, Kh. V. Aliguliyevaa, V. N. Zverevb, A. M. Kerimovaa, N. T. Mamedova a Institute of Physics Azerbaijan Academy of Sciences, Baku, Azerbaijan
b Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow region
Abstract:
A technology has been developed for the preparation of thin films of the Bi$_{2}$Te$_{2.7}$Se$_{0.3}$ solid solution through the thermal evaporation in a vacuum using the “hot-wall” method. The high quality of the thin films thus prepared has been confirmed by the X-ray diffraction and Raman scattering data. The electron transport has been investigated over wide ranges of temperatures (1.4–300 K) and magnetic fields (up to 8 T). It has been assumed that the observed weak antilocalization is associated with the dominant contribution from the surface states of a topological insulator. The dephasing length has been estimated.
Received: 04.08.2015 Revised: 20.03.2016
Citation:
N. A. Abdullaev, O. Z. Alekperov, Kh. V. Aliguliyeva, V. N. Zverev, A. M. Kerimova, N. T. Mamedov, “Weak antilocalization in thin films of the Bi$_{2}$Te$_{2.7}$Se$_{0.3}$ solid solution”, Fizika Tverdogo Tela, 58:9 (2016), 1806–1811; Phys. Solid State, 58:9 (2016), 1870–1875
Linking options:
https://www.mathnet.ru/eng/ftt9864 https://www.mathnet.ru/eng/ftt/v58/i9/p1806
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