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Semiconductors
Effect of doping on the properties of hydrogenated amorphous silicon irradiated with femtosecond laser pulses
K. N. Denisova, A. S. Ilyin, M. N. Martyshov, A. S. Vorontsov Lomonosov Moscow State University
Abstract:
A comparative analysis of the effect of femtosecond laser irradiation on the structure and conductivity of undoped and boron-doped hydrogenated amorphous silicon ($\alpha$-Si: H) is performed. It is demonstrated that the process of nanocrystal formation in the amorphous matrix under femtosecond laser irradiation is initiated at lower laser energy densities in undoped $\alpha$-Si: H samples. The differences in conductivity between undoped and doped $\alpha$-Si: H samples vanish almost completely after irradiation with an energy density of 150–160 mJ/cm$^2$.
Received: 13.02.2017
Citation:
K. N. Denisova, A. S. Ilyin, M. N. Martyshov, A. S. Vorontsov, “Effect of doping on the properties of hydrogenated amorphous silicon irradiated with femtosecond laser pulses”, Fizika Tverdogo Tela, 60:4 (2018), 637–640; Phys. Solid State, 60:4 (2018), 640–643
Linking options:
https://www.mathnet.ru/eng/ftt9223 https://www.mathnet.ru/eng/ftt/v60/i4/p637
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Abstract page: | 33 | Full-text PDF : | 8 |
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