Effect of doping on the properties of hydrogenated amorphous silicon irradiated with femtosecond laser pulses

A comparative analysis of the effect of femtosecond laser irradiation on the structure and conductivity of undoped and boron-doped hydrogenated amorphous silicon ($\alpha$-Si: H) is performed. It is demonstrated that the process of nanocrystal formation in the amorphous matrix under femtosecond laser irradiation is initiated at lower laser energy densities in undoped $\alpha$-Si: H samples. The differences in conductivity between undoped and doped $\alpha$-Si: H samples vanish almost completely after irradiation with an energy density of 150–160 mJ/cm$^2$.