|
This article is cited in 4 scientific papers (total in 4 papers)
Semiconductors
The exciton–polariton dispersion law under the action of strong pumping in the region of the $M$-band of luminescence
P. I. Khadzhiab, L. Yu. Nad'kinb, D. A. Markovb a Institute of Applied Physics Academy of Sciences of Moldova, Kishinev
b Taras Shevchenko Transnistria State University, Tiraspol
Abstract:
The double-pulse interaction with excitons and biexcitons in semiconductors is studied theoretically. It is shown that the dispersion law of carrier wave has three branches under the action of a powerful pumping in the region of the $M$-band of luminescence. Values of parameters at which the dispersion law branches can intersect due to the degeneration of the exciton level energy have been found. The effect of a significant change in the force of coupling between the exciton and photon of a weak pulse with a change in the pumping intensity is predicted.
Received: 10.07.2017
Citation:
P. I. Khadzhi, L. Yu. Nad'kin, D. A. Markov, “The exciton–polariton dispersion law under the action of strong pumping in the region of the $M$-band of luminescence”, Fizika Tverdogo Tela, 60:4 (2018), 660–665; Phys. Solid State, 60:4 (2018), 663–668
Linking options:
https://www.mathnet.ru/eng/ftt9225 https://www.mathnet.ru/eng/ftt/v60/i4/p660
|
Statistics & downloads: |
Abstract page: | 43 | Full-text PDF : | 19 |
|