This article is cited in 3 scientific papers (total in 3 papers)
Polymers
Unoccupied electron states and the formation of interface between films of dimethyl-substituted thiophene–phenylene coolygomers and oxidized silicon surface
Abstract:
The unoccupied electron states and the boundary potential barrier during deposition of ultrathin films of dimethyl-substituted thiophene–phenylene coolygomers of the type of CH3–phenylene–thiophene–thiophene–phenylene–CH3 (CH3–PTTP–CH3) on an oxidized silicon surface have been studied. The electronic characteristics have been measured in the energy range from 5 to 20 eV above the Fermi level using total current spectroscopy (TCS). The structure of the CH3–PTTP–CH3 film surfaces has been studied by atomic force microscopy (AFM), and the atomic compositions of the films have been studied by X-ray photoelectron spectroscopy (XPS). The changes in the maximum intensities measured by the TCS method obtained from the deposited CH3–PTTP–CH3 film and from the substrate during increasing in the organic coating thickness to 6 nm is discussed. The formation of the boundary potential barrier in the n-Si/SiO2/CH3–PTTP–CH3 is accompanied by the decrease in the surface work function from 4.2 ± 0.1 to 4.0 ± 0.1 eV as the organic coating thickness increases to 3 nm. The ratio of atomic concentrations C: S in the CH3–PTTP–CH3 films well corresponds to the chemical formula of CH3–PTTP–CH3 molecules. The roughness of the CH3–PTTP–CH3 coating surface was not higher than 10 nm on the ∼10 × 10 μm areas as the total CH3–PTTP–CH3-layer thickness was about 100 nm.
Citation:
A. S. Komolov, E. F. Lazneva, N. B. Gerasimova, Yu. A. Panina, G. D. Zashikhin, S. A. Pshenichnyuk, O. V. Borshchev, S. A. Ponomarenko, B. Handke, “Unoccupied electron states and the formation of interface between films of dimethyl-substituted thiophene–phenylene coolygomers and oxidized silicon surface”, Fizika Tverdogo Tela, 60:5 (2018), 1012–1017; Phys. Solid State, 60:5 (2018), 1029–1034
\Bibitem{KomLazGer18}
\by A.~S.~Komolov, E.~F.~Lazneva, N.~B.~Gerasimova, Yu.~A.~Panina, G.~D.~Zashikhin, S.~A.~Pshenichnyuk, O.~V.~Borshchev, S.~A.~Ponomarenko, B.~Handke
\paper Unoccupied electron states and the formation of interface between films of dimethyl-substituted thiophene--phenylene coolygomers and oxidized silicon surface
\jour Fizika Tverdogo Tela
\yr 2018
\vol 60
\issue 5
\pages 1012--1017
\mathnet{http://mi.mathnet.ru/ftt9216}
\crossref{https://doi.org/10.21883/FTT.2018.05.45805.298}
\elib{https://elibrary.ru/item.asp?id=32739897}
\transl
\jour Phys. Solid State
\yr 2018
\vol 60
\issue 5
\pages 1029--1034
\crossref{https://doi.org/10.1134/S1063783418050128}
Linking options:
https://www.mathnet.ru/eng/ftt9216
https://www.mathnet.ru/eng/ftt/v60/i5/p1012
This publication is cited in the following 3 articles:
A. S. Komolov, E. F. Lazneva, N. B. Gerasimova, V. S. Sobolev, S. A. Pshenichnyuk, O. V. Borshchev, S. A. Ponomarenko, B. Handke, “Unoccupied electron states of ultrathin films of thiophene–phenylene cooligomers on the surface of polycrystalline gold”, Phys. Solid State, 62:10 (2020), 1960–1966
A.S. Komolov, E.F. Lazneva, N.B. Gerasimova, Yu. A. Panina, V.S. Sobolev, A.V. Koroleva, S.A. Pshenichnyuk, N.L. Asfandiarov, A. Modelli, B. Handke, O.V. Borshchev, S.A. Ponomarenko, “Conduction band electronic states of ultrathin layers of thiophene/phenylene co-oligomers on an oxidized silicon surface”, Journal of Electron Spectroscopy and Related Phenomena, 235 (2019), 40
A. S. Komolov, E. F. Lazneva, N. B. Gerasimova, V. S. Sobolev, Yu. A. Panina, S. A. Pshenichnyuk, N. L. Asfandiarov, “Atomic composition and morphology of thin films of resveratrol deposited on oxidized silicon and polycrystalline gold surfaces”, Phys. Solid State, 61:3 (2019), 468–473