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Fizika Tverdogo Tela, 2018, Volume 60, Issue 5, Pages 1012–1017
DOI: https://doi.org/10.21883/FTT.2018.05.45805.298
(Mi ftt9216)
 

This article is cited in 3 scientific papers (total in 3 papers)

Polymers

Unoccupied electron states and the formation of interface between films of dimethyl-substituted thiophene–phenylene coolygomers and oxidized silicon surface

A. S. Komolova, E. F. Laznevaa, N. B. Gerasimovaa, Yu. A. Paninaa, G. D. Zashikhina, S. A. Pshenichnyukb, O. V. Borshchevc, S. A. Ponomarenkocd, B. Handkee

a Saint Petersburg State University
b Institute of Molecule and Crystal Physics, Ufa Federal Research Centre, Russian Academy of Sciences
c N. S. Enikolopov Institute of Synthetic Polymer Materials RAS, Moscow
d Lomonosov Moscow State University
e GH University of Science and Technology, Faculty of Material Science and Ceramics, Kraków, Poland
Full-text PDF (497 kB) Citations (3)
Abstract: The unoccupied electron states and the boundary potential barrier during deposition of ultrathin films of dimethyl-substituted thiophene–phenylene coolygomers of the type of CH$_3$–phenylene–thiophene–thiophene–phenylene–CH$_3$ (CH$_3$–PTTP–CH$_3$) on an oxidized silicon surface have been studied. The electronic characteristics have been measured in the energy range from 5 to 20 eV above the Fermi level using total current spectroscopy (TCS). The structure of the CH$_3$–PTTP–CH$_3$ film surfaces has been studied by atomic force microscopy (AFM), and the atomic compositions of the films have been studied by X-ray photoelectron spectroscopy (XPS). The changes in the maximum intensities measured by the TCS method obtained from the deposited CH$_3$–PTTP–CH$_3$ film and from the substrate during increasing in the organic coating thickness to 6 nm is discussed. The formation of the boundary potential barrier in the $n$-Si/SiO$_2$/CH$_3$–PTTP–CH$_3$ is accompanied by the decrease in the surface work function from 4.2 $\pm$ 0.1 to 4.0 $\pm$ 0.1 eV as the organic coating thickness increases to 3 nm. The ratio of atomic concentrations C: S in the CH$_3$–PTTP–CH$_3$ films well corresponds to the chemical formula of CH$_3$–PTTP–CH$_3$ molecules. The roughness of the CH$_3$–PTTP–CH$_3$ coating surface was not higher than 10 nm on the $\sim$10 $\times$ 10 $\mu$m areas as the total CH$_3$–PTTP–CH$_3$-layer thickness was about 100 nm.
Funding agency Grant number
Russian Foundation for Basic Research 15-29-05786-офи-м
18-03-00020-а
18-03-00179-а
Russian Science Foundation 15-12-30031
Received: 30.10.2017
English version:
Physics of the Solid State, 2018, Volume 60, Issue 5, Pages 1029–1034
DOI: https://doi.org/10.1134/S1063783418050128
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. S. Komolov, E. F. Lazneva, N. B. Gerasimova, Yu. A. Panina, G. D. Zashikhin, S. A. Pshenichnyuk, O. V. Borshchev, S. A. Ponomarenko, B. Handke, “Unoccupied electron states and the formation of interface between films of dimethyl-substituted thiophene–phenylene coolygomers and oxidized silicon surface”, Fizika Tverdogo Tela, 60:5 (2018), 1012–1017; Phys. Solid State, 60:5 (2018), 1029–1034
Citation in format AMSBIB
\Bibitem{KomLazGer18}
\by A.~S.~Komolov, E.~F.~Lazneva, N.~B.~Gerasimova, Yu.~A.~Panina, G.~D.~Zashikhin, S.~A.~Pshenichnyuk, O.~V.~Borshchev, S.~A.~Ponomarenko, B.~Handke
\paper Unoccupied electron states and the formation of interface between films of dimethyl-substituted thiophene--phenylene coolygomers and oxidized silicon surface
\jour Fizika Tverdogo Tela
\yr 2018
\vol 60
\issue 5
\pages 1012--1017
\mathnet{http://mi.mathnet.ru/ftt9216}
\crossref{https://doi.org/10.21883/FTT.2018.05.45805.298}
\elib{https://elibrary.ru/item.asp?id=32739897}
\transl
\jour Phys. Solid State
\yr 2018
\vol 60
\issue 5
\pages 1029--1034
\crossref{https://doi.org/10.1134/S1063783418050128}
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