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This article is cited in 2 scientific papers (total in 2 papers)
International Conference ''Mechanisms and Nonlinear Problems of Nucleation, Growth of Crystals and Thin Films'' dedicated to the memory of the outstanding theoretical physicist Professor V.V. Slezov (Proceedings) St. Petersburg, July 1-5, 2019
Surface physics and thin films
Low-temperature synthesis of $\alpha$-SiC nanocrystals
K. Kh. Nussupov, N. B. Beisenkhanov, D. I. Bakranova, S. Keinbay, A. A. Turakhun, A. A. Sultan Kazakh-British Technical University, Almaty, Kazakhstan
Abstract:
Thick SiC$_ x$ films have been deposited on a $c$-Si surface by radiofrequency (rf) magnetron sputtering (150 W, 13.56 MHz, Ar flow 2.4 L/h, 0.4 Pa) of graphite and silicon targets. The X-ray diffraction study shows that fast annealing of the SiC$_ x$ film deposited on the $c$-Si surface for 3 h leads to the low-temperature (970$^{\circ}$C) formation of hexagonal structural phases $\alpha$-SiC (6 $H$-SiC and other) along with the cubic modification of silicon carbide $\beta$-SiC. The IR spectroscopy has shown the formation of SiC nanocrystal nuclei due to the energy action of the rf plasma ions on the upper layer of the SiC film during its growth. The data of X-ray reflectometry demonstrate a high density of the films up to 3.59 g/cm$^2$ as a result of formation of dense C and SiC clusters in the layers under action of the rf plasma.
Keywords:
carbide, synthesis, low temperature, nanocrystals.
Received: 16.07.2019 Revised: 16.07.2019 Accepted: 25.07.2019
Citation:
K. Kh. Nussupov, N. B. Beisenkhanov, D. I. Bakranova, S. Keinbay, A. A. Turakhun, A. A. Sultan, “Low-temperature synthesis of $\alpha$-SiC nanocrystals”, Fizika Tverdogo Tela, 61:12 (2019), 2447–2453; Phys. Solid State, 61:12 (2019), 2473–2479
Linking options:
https://www.mathnet.ru/eng/ftt8592 https://www.mathnet.ru/eng/ftt/v61/i12/p2447
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