|
This article is cited in 2 scientific papers (total in 2 papers)
International Conference ''Mechanisms and Nonlinear Problems of Nucleation, Growth of Crystals and Thin Films'' dedicated to the memory of the outstanding theoretical physicist Professor V.V. Slezov (Proceedings) St. Petersburg, July 1-5, 2019
Surface physics and thin films
Impurity effects on nucleation and growth of SiC clusters and layers on Si(100) and Si(111)
J. Pezoldta, M. N. Lubovb, V. S. Kharlamovc a Institut für Mikro- und Nanotechnologien, Technische Universität Ilmenau, Ilmenau, Germany
b Saint Petersburg Academic University, St. Petersburg, Russian Federation
c A.F. Ioffe Physical-Technical Institute of RAS, St. Petersburg, Russian Federation
Abstract:
A kinetic Monte Carlo model of silicon carbide growth on silicon surface is proposed. Based on this model, the growth of silicon carbide clusters on silicon in the presence of a pre-deposited impurity of various types: attractive and repulsive, is studied. The density of silicon carbide clusters on silicon is calculated. Calculations of the dependencies of the silicon carbide clusters density on the impurity mobility are carried out. The process of redistribution of the species in the multi-component C|Ge|Si structure during annealing is studied in the framework of the kinetic approach. Concentration profiles of the structure components are determined.
Keywords:
silicon surface, silicon carbide, interface, impurity, kinetic Monte Carlo, rate equation.
Received: 16.07.2019 Revised: 16.07.2019 Accepted: 16.07.2019
Citation:
J. Pezoldt, M. N. Lubov, V. S. Kharlamov, “Impurity effects on nucleation and growth of SiC clusters and layers on Si(100) and Si(111)”, Fizika Tverdogo Tela, 61:12 (2019), 2446; Phys. Solid State, 61:12 (2019), 2468–2472
Linking options:
https://www.mathnet.ru/eng/ftt8591 https://www.mathnet.ru/eng/ftt/v61/i12/p2446
|
Statistics & downloads: |
Abstract page: | 30 | Full-text PDF : | 5 |
|