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Fizika Tverdogo Tela, 2019, Volume 61, Issue 12, Page 2446 (Mi ftt8591)  
This article is cited in 2 scientific papers (total in 2 papers)

International Conference ''Mechanisms and Nonlinear Problems of Nucleation, Growth of Crystals and Thin Films'' dedicated to the memory of the outstanding theoretical physicist Professor V.V. Slezov (Proceedings) St. Petersburg, July 1-5, 2019
Surface physics and thin films

Impurity effects on nucleation and growth of SiC clusters and layers on Si(100) and Si(111)

J. Pezoldta, M. N. Lubovb, V. S. Kharlamovc

a Institut für Mikro- und Nanotechnologien, Technische Universität Ilmenau, Ilmenau, Germany
b Saint Petersburg Academic University, St. Petersburg, Russian Federation
c A.F. Ioffe Physical-Technical Institute of RAS, St. Petersburg, Russian Federation
Full-text PDF (25 kB) Citations (2)
Abstract: A kinetic Monte Carlo model of silicon carbide growth on silicon surface is proposed. Based on this model, the growth of silicon carbide clusters on silicon in the presence of a pre-deposited impurity of various types: attractive and repulsive, is studied. The density of silicon carbide clusters on silicon is calculated. Calculations of the dependencies of the silicon carbide clusters density on the impurity mobility are carried out. The process of redistribution of the species in the multi-component C|Ge|Si structure during annealing is studied in the framework of the kinetic approach. Concentration profiles of the structure components are determined.
Keywords: silicon surface, silicon carbide, interface, impurity, kinetic Monte Carlo, rate equation.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 16.9789.2017/БЧ
German Academic Exchange Service (DAAD) 57435564
The contribution of M.N. Lubov was done within the framework of the state task of the Ministry of Education and Science of Russia (no. 16.9789.2017/BCh). J. Pezoldt, M.N. Lubov, and V.S. Kharlamov acknowledge support of this research by DAAD under grant no. 57435564.
Received: 16.07.2019
Revised: 16.07.2019
Accepted: 16.07.2019
English version:
Physics of the Solid State, 2019, Volume 61, Issue 12, Pages 2468–2472
DOI: https://doi.org/10.1134/S1063783419120382
Bibliographic databases:
Document Type: Article
Language: English
Citation: J. Pezoldt, M. N. Lubov, V. S. Kharlamov, “Impurity effects on nucleation and growth of SiC clusters and layers on Si(100) and Si(111)”, Fizika Tverdogo Tela, 61:12 (2019), 2446; Phys. Solid State, 61:12 (2019), 2468–2472
Citation in format AMSBIB
\Bibitem{PezLubKha19}
\by J.~Pezoldt, M.~N.~Lubov, V.~S.~Kharlamov
\paper Impurity effects on nucleation and growth of SiC clusters and layers on Si(100) and Si(111)
\jour Fizika Tverdogo Tela
\yr 2019
\vol 61
\issue 12
\pages 2446
\mathnet{http://mi.mathnet.ru/ftt8591}
\elib{https://elibrary.ru/item.asp?id=42571152}
\transl
\jour Phys. Solid State
\yr 2019
\vol 61
\issue 12
\pages 2468--2472
\crossref{https://doi.org/10.1134/S1063783419120382}
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    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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