Fizika Tverdogo Tela
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Fizika Tverdogo Tela:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Fizika Tverdogo Tela, 2019, Volume 61, Issue 12, Page 2333 (Mi ftt8561)  
International Conference ''Mechanisms and Nonlinear Problems of Nucleation, Growth of Crystals and Thin Films'' dedicated to the memory of the outstanding theoretical physicist Professor V.V. Slezov (Proceedings) St. Petersburg, July 1-5, 2019
Semiconductors

GaN selective epitaxy in sub-micron windows with different depths formed by ion beam nanolithography

S. N. Rodina, V. V. Lundina, A. F. Tsatsul'nikovb, A. V. Sakharova, S. O. Usovb, M. I. Mitrofanova, I. V. Levitskiia, V. P. Evtikhieva, M. A. Kaliteevskic

a Ioffe Institute, St. Petersburg, Russia
b Research and Engineering Center on Submicron Heterostructures for Microelectronics, Russian Academy of Sciences, St. Petersburg, Russia
c ITMO University, St. Petersburg, Russia
Full-text PDF (24 kB)
Abstract: A significant difference in the growth mechanism of spatially closed structures of gallium nitride during selective growth in submicron windows with and without penetration into the GaN sublayer was demonstrated. The mechanisms of generation and development of dislocations, their role in the formation of self-organizing coaxial structures were modeled.
Keywords: selective epitaxy, dislocations in GaN, self-organized coaxial structure, MOCVD, FIB.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 3.3194.2017/4.6
Russian Foundation for Basic Research 17-02-01099-a
In detail of measurement, this work was supported by the Ministry of Education and Science of the Russian Federation (project no. 3.3194.2017/4.6).
In terms of epitaxial growth studies this work was supported by the Russian Foundation for Basic Research (project no. 17-02-01099-a).
Received: 16.07.2019
Revised: 16.07.2019
Accepted: 24.07.2019
English version:
Physics of the Solid State, 2019, Volume 61, Issue 12, Pages 2335–2337
DOI: https://doi.org/10.1134/S106378341912045X
Bibliographic databases:
Document Type: Article
Language: English
Citation: S. N. Rodin, V. V. Lundin, A. F. Tsatsul'nikov, A. V. Sakharov, S. O. Usov, M. I. Mitrofanov, I. V. Levitskii, V. P. Evtikhiev, M. A. Kaliteevski, “GaN selective epitaxy in sub-micron windows with different depths formed by ion beam nanolithography”, Fizika Tverdogo Tela, 61:12 (2019), 2333; Phys. Solid State, 61:12 (2019), 2335–2337
Citation in format AMSBIB
\Bibitem{RodLunTsa19}
\by S.~N.~Rodin, V.~V.~Lundin, A.~F.~Tsatsul'nikov, A.~V.~Sakharov, S.~O.~Usov, M.~I.~Mitrofanov, I.~V.~Levitskii, V.~P.~Evtikhiev, M.~A.~Kaliteevski
\paper GaN selective epitaxy in sub-micron windows with different depths formed by ion beam nanolithography
\jour Fizika Tverdogo Tela
\yr 2019
\vol 61
\issue 12
\pages 2333
\mathnet{http://mi.mathnet.ru/ftt8561}
\elib{https://elibrary.ru/item.asp?id=42571121}
\transl
\jour Phys. Solid State
\yr 2019
\vol 61
\issue 12
\pages 2335--2337
\crossref{https://doi.org/10.1134/S106378341912045X}
Linking options:
  • https://www.mathnet.ru/eng/ftt8561
  • https://www.mathnet.ru/eng/ftt/v61/i12/p2333
    • Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika Tverdogo Tela Fizika Tverdogo Tela
    Statistics & downloads:
    Abstract page:39
    Full-text PDF :14
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024