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Физика и техника полупроводников, 2020, том 54, выпуск 12, страница 1394
(Mi phts6693)
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Эта публикация цитируется в 1 научной статье (всего в 1 статье)
NANOSTRUCTURES : PHYSICS AND TECHNOLOGY 28th International Symposium (Minsk, Republic of Belarus, September, 2020)
Nanostructure Characterization
Features of reflection from the layer of hyperbolic metamaterial
S. N. Kurilkinaa, N. S. Petrovb, V. N. Belyia, A. V. Ziminc a Stepanov Institute of Physics of National Academy of Sciences of Belarus, 220072 Minsk, Belarus
b Institute for Advanced Training and Retraining of Personnel on New Directions for the Development of Technics,
Technology and Economics of the Belarusian National Technical University, 220107 Minsk, Belarus
c Belarusian State University of Informatics and Radioelectronics,
220013 Minsk, Belarus
Аннотация:
In this paper, we investigate the features of reflection of a plane elliptically polarized electromagnetic wave fallen from isotropic transparent dielectric on a layer of hyperbolic metamaterial with optical axis in an interface and main effective dielectric permittivities less than the permittivity of dielectric. The cases are analyzed when one (ordinary or extraordinary) wave or two waves, exited inside the layer, are inhomogeneous. It is shown that for certain sub-wavelength thickness of the layer one can choose the angles of incidence for which two inhomogeneous (evanescent) waves existing in this layer totally tunnel through it. It is established that, in contrary to ordinary uniaxial crystal, maximal value of reflection coefficient from the metamaterial layer approaches the unity when the thickness increases.
Ключевые слова:
hyperbolic metamaterial, effective medium theory, electromagnetic wave, reflection, polarization.
Поступила в редакцию: 23.06.2020 Исправленный вариант: 23.07.2020 Принята в печать: 27.07.2020
Образец цитирования:
S. N. Kurilkina, N. S. Petrov, V. N. Belyi, A. V. Zimin, “Features of reflection from the layer of hyperbolic metamaterial”, Физика и техника полупроводников, 54:12 (2020), 1394; Semiconductors, 54:12 (2020), 1695–1697
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/phts6693 https://www.mathnet.ru/rus/phts/v54/i12/p1394
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Страница аннотации: | 49 | PDF полного текста: | 18 |
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