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Публикации в базе данных Math-Net.Ru |
Цитирования |
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2021 |
| 1. |
Y.-C. Lin, J.-S. Niu, W.-C. Liu, J.-H. Tsai, “Thermal stability of HfO$_2$|AlGaN|GaN normally-Off transistors with Ni|Au and Pt gate metals”, Физика и техника полупроводников, 55:7 (2021), 618  ; Semiconductors, 55:7 (2021), 608–616 |
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2020 |
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Y.-C. Lin, J.-S. Niu, W.-C. Liu, J.-H. Tsai, “Investigation of Pd|HfO$_2$|AlGaN|GaN enhancement-mode high electron mobility transistor with sensitization, activation, and electroless-plating approaches”, Физика и техника полупроводников, 54:7 (2020), 684 ; Semiconductors, 54:7 (2020), 803–810 |
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2019 |
| 3. |
Jung-Hui Tsai, Pao-Sheng Lin, Yu-Chi Chen, Syuan-Hao Liou, Jing-Shiuan Niu, “Comparative studies of AlGaAs/InGaAs enhancement/depletion-mode high electron mobility transistors with virtual channel layers by hybrid gate recesses approaches”, Физика и техника полупроводников, 53:3 (2019), 430  ; Semiconductors, 53:3 (2019), 406–410 |
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