|
|
|
Публикации в базе данных Math-Net.Ru |
Цитирования |
|
2021 |
| 1. |
F. Jabli, S. Dhouibi, M. Gassoumi, “Improvement in electrical and 2DEG properties of Al$_{0.26}$Ga$_{0.74}$N|GaN|Si HEMTs”, Физика и техника полупроводников, 55:3 (2021), 285  ; Semiconductors, 55:3 (2021), 379–383 |
|
2020 |
| 2. |
M. Gassoumi, “Conductance deep-level transient spectroscopy and current transport mechanisms in Au|Pt|$n$-GaN Schottky barrier diodes”, Физика твердого тела, 62:4 (2020), 555 ; Phys. Solid State, 62:4 (2020), 636–641 |
6
|
| 3. |
M. Gassoumi, “Characterization of deep levels in lGaN|GaN HEMT by FT-DLTS and current DLTS”, Физика и техника полупроводников, 54:10 (2020), 1099 ; Semiconductors, 54:10 (2020), 1296–1303 |
4
|
|
Обратная связь: