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Эта публикация цитируется в 10 научных статьях (всего в 10 статьях)
КОНДЕНСИРОВАННОЕ СОСТОЯНИЕ
Engineering near-surface electron states in three-dimensional
topological insulators
V. N. Men'shovab, V. V. Tugushevcab, E. V. Chulkovdb a National Research Centre "Kurchatov Institute"
b Tomsk State University
c A. M. Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow
d Departamento de Física de Materiales, Facultad de Quimica, UPV/EHU, San Sebastian, Basque Country
Аннотация:
Using the continual model of a semi-infinite three dimensional (3D) topological insulator (TI)
we study the effect of the surface potential (SP) on the formation of helical topological states near the
surface. The results reveal that spatial profile and spectrum of these states strongly depend on the SP type
and strength. We pay special attention to the 3D TI substrate/non-magnetic insulating overlayer system to
illustrate the principles of the topological near-surface states engineering.
Поступила в редакцию: 05.08.2013 Исправленный вариант: 03.10.2013
Образец цитирования:
V. N. Men'shov, V. V. Tugushev, E. V. Chulkov, “Engineering near-surface electron states in three-dimensional
topological insulators”, Письма в ЖЭТФ, 98:10 (2013), 676–681; JETP Letters, 98:10 (2013), 603–608
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/jetpl3575 https://www.mathnet.ru/rus/jetpl/v98/i10/p676
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Страница аннотации: | 175 | PDF полного текста: | 45 | Список литературы: | 29 | Первая страница: | 6 |
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