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Publications in Math-Net.Ru |
Citations |
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2017 |
1. |
M. A. Royz, A. N. Baranov, A. N. Imenkov, D. S. Burenina, A. A. Pivovarova, A. M. Monakhov, E. A. Grebenshchikova, Yu. P. Yakovlev, “Collective modes in coupled semiconductor disk lasers in the case of whispering-gallery modes”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1273–1277 ; Semiconductors, 51:9 (2017), 1224–1228 |
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2016 |
2. |
A. N. Imenkov, E. A. Grebenshchikova, V. A. Shutaev, A. M. Ospennikov, V. V. Sherstnev, Yu. P. Yakovlev, “Photovoltage and photocurrent in Pd–oxide–InP structures in a hydrogen medium”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 946–951 ; Semiconductors, 50:7 (2016), 929–934 |
4
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1993 |
3. |
Yu. P. Yakovlev, A. N. Baranov, A. N. Imenkov, V. V. Sherstnev, E. V. Stepanov, Ya. Ya. Ponurovskii, “InAsSb/InAsSbP injection lasers for high-resolution spectroscopy”, Kvantovaya Elektronika, 20:9 (1993), 839–842 [Quantum Electron., 23:9 (1993), 726–729 ] |
6
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1992 |
4. |
A. N. Baranov, S. Y. Belkin, T. N. Danilova, O. G. Ershov, A. N. Imenkov, Yu. P. Yakovlev, “Природа длинноволнового сдвига спектра когерентного излучения
в гетеролазерах на основе GaInAsSb”, Fizika i Tekhnika Poluprovodnikov, 26:11 (1992), 1971–1976 |
5. |
A. N. Baranov, T. N. Danilova, O. G. Ershov, A. N. Imenkov, V. V. Sherstnev, Yu. P. Yakovlev, “LENGTH-WAVE LASERS BASED ON INASSB-INASSBP FOR METHANE SPECTROSCOPY
WHERE (LAMBDA=3.2-3.4 MU-M)”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:22 (1992), 6–10 |
6. |
A. N. Baranov, S. Y. Belkin, T. N. Danilova, O. G. Ershov, A. N. Imenkov, Yu. P. Yakovlev, “GENERATION OF COHERENT EMISSION ON P-P-BOUNDARY IN DHS GAINASSB LASERS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:17 (1992), 18–24 |
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1991 |
7. |
A. A. Andaspaeva, A. N. Baranov, B. L. Gel'mont, B. E. Djurtanov, G. G. Zegrya, A. N. Imenkov, Yu. P. Yakovlev, S. G. Yastrebov, “Исследование температурной зависимости пороговой плотности тока ДГС
лазеров на основе GaInAsSb”, Fizika i Tekhnika Poluprovodnikov, 25:3 (1991), 394–401 |
8. |
A. N. Baranov, T. N. Danilova, O. G. Ershov, A. N. Imenkov, Yu. P. Yakovlev, “EFFECT OF INTERFERENCE RECOMBINATION ON THRESHOLD CHARACTERISTICS OF
GAINASSB/GASB LASERS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:17 (1991), 54–59 |
9. |
A. Abragam, E. Gulitsius, T. N. Danilova, B. E. Djurtanov, A. N. Imenkov, Yu. P. Yakovlev, “EMISSION STABILIZATION UNDER THE GROWN INGAASSB-GASB HETEROLASE
(LAMBDA=2-MU-M) OPERATION”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:6 (1991), 56–60 |
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1990 |
10. |
A. A. Andaspaeva, A. N. Baranov, A. A. Guseinov, A. N. Imenkov, N. M. Kolchanova, Yu. P. Yakovlev, “Природа спонтанной электролюминесценции в гетеросветодиодах на основе
GaInAsSb для спектрального диапазона $1.8{-}2.4$ мкм”, Fizika i Tekhnika Poluprovodnikov, 24:10 (1990), 1708–1714 |
11. |
A. N. Imenkov, O. P. Kapranchik, A. M. Litvak, A. A. Popov, N. A. Charykov, Yu. P. Yakovlev, “LONG-WAVE LIGHT DIODES BASED ON GAINASSB IN THE VICINITY OF IMMSCIBILITY
DOMAIN WHERE LAMBDA=2,4-2,6 MU-M, T=300-K)”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:24 (1990), 19–24 |
12. |
A. N. Baranov, A. N. Imenkov, O. P. Kapranchik, V. V. Negreskul, A. G. Chernyavskii, V. V. Sherstnev, Yu. P. Yakovlev, “LONG-WAVE LIGHT DIODES BASED ON INAS1-X-YSBXPY/INAS HETEROTRANSITIONS
(WHERE LAMBDA=3.0-4 MU-M AT 300-K) WITH WIDE-BAND WINDOW”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:16 (1990), 42–47 |
13. |
V. G. Avetisov, A. N. Baranov, A. N. Imenkov, A. I. Nadezhdinskii, A. N. Khusnutdinov, Yu. P. Yakovlev, “CALCULATION OF THE WIDTH OF EMISSION-LINE OF LONG-WAVE GAINASSB
INJECTION-LASERS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:14 (1990), 66–70 |
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1989 |
14. |
A. A. Andaspaeva, A. N. Baranov, E. A. Grebenshchikova, A. A. Guseinov, A. N. Imenkov, A. A. Rogachev, G. M. Filaretova, Yu. P. Yakovlev, “Спонтанная электролюминесценция в гетеропереходах II типа
на основе GaInAsSb/GaSb (${\lambda=2.5}$ мкм, ${T=300}$ K)”, Fizika i Tekhnika Poluprovodnikov, 23:8 (1989), 1373–1377 |
15. |
A. Andaspaeva, A. N. Baranov, A. A. Guseinov, A. N. Imenkov, N. M. Kolchanova, E. A. Sidorenkova, Yu. P. Yakovlev, “HIGH-PERFORMANCE PHOTODIODES BASED ON GAINASSB FOR SPECTRAL RANGE OF
1.8-2.4 MU-M (T=300-K)”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:18 (1989), 71–75 |
16. |
N. S. Averkiev, A. N. Imenkov, A. M. Litvak, Yu. P. Yakovlev, “RELAXATION OF EMISSION AND NON-EQUILIBRIUM POPULATION IN
QUANTUM-DIMENSIONAL SEMICONDUCTING LASERS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:3 (1989), 79–83 |
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1988 |
17. |
A. N. Baranov, T. N. Danilova, B. E. Djurtanov, A. N. Imenkov, O. G. Ershov, Yu. P. Yakovlev, “COHERENT EMISSION-SPECTRA OF GAINASSB BAND LASERS”, Zhurnal Tekhnicheskoi Fiziki, 58:8 (1988), 1623–1626 |
18. |
A. N. Baranov, E. A. Grebenshchikova, B. E. Djurtanov, T. N. Danilova, A. N. Imenkov, Yu. P. Yakovlev, “LONG-WAVE LASERS BASED ON GAINASSB SOLID-SOLUTIONS NEAR THE
IMMISCIBILITY BOUNDARY(LAMBDA-APPROXIMATELY-2.5 MU-M, T=300-K)”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:20 (1988), 1839–1843 |
19. |
A. N. Baranov, T. N. Danilova, B. E. Djurtanov, A. N. Imenkov, S. G. Konnikov, A. M. Litvak, V. E. Usmanskii, Yu. P. Yakovlev, “EMISSION GENERATION IN THE CHANNELED OVERGROWN LASER BASED ON
GAINASSB/GASB IN CONTINUOUS REGIME (T=20-DEGREES-C, LAMBDA=2.0-MU-M)”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:18 (1988), 1671–1675 |
20. |
A. Andaspaeva, A. N. Baranov, A. Guseinov, A. N. Imenkov, L. M. Litvak, G. M. Filaretova, Yu. P. Yakovlev, “HIGH-EFFICIENT PHOTODIODES BASED ON GAINASSB (WHERE LAMBDA=2.2 MU-M,
ZETA=4-PERCENT, T=300-K)”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:9 (1988), 845–849 |
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1987 |
21. |
A. N. Baranov, B. E. Djurtanov, A. N. Imenkov, A. M. Litvak, Yu. P. Yakovlev, “Effect of a resonator length on electroluminescent characteristics of $Ga\,In\,As\,Sb$-based lasers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:9 (1987), 517–523 |
22. |
A. N. Baranov, B. E. Djurtanov, A. N. Imenkov, I. N. Timchenko, Yu. P. Yakovlev, “Manifestation of self-correlated quantum-dimensional potential holes in electroluminescent properties of $Ga\,In\,As\,Sb$ based lasers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:8 (1987), 459–464 |
23. |
N. S. Averkiev, A. N. Baranov, A. N. Imenkov, A. A. Rogachev, Yu. P. Yakovlev, “Polarization of emission in quantum dimensional on one heterotransition”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:6 (1987), 332–337 |
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1986 |
24. |
A. N. Baranov, B. E. Djurtanov, A. N. Imenkov, A. A. Rogachev, Yu. M. Shernyakov, Yu. P. Yakovlev, “Generation of Coherent Radiation in Quantum-Dimensional Structure on the Single Heterojunction”, Fizika i Tekhnika Poluprovodnikov, 20:12 (1986), 2217–2221 |
25. |
T. N. Danilova, A. N. Imenkov, Yu. P. Yakovlev, “Expansion of spectral photosensitivity in variable R-P-structures by the over-emission effect”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:20 (1986), 1241–1245 |
26. |
A. N. Baranov, B. E. Djurtanov, A. N. Imenkov, A. A. Rogachev, Yu. M. Shernyakov, Yu. P. Yakovlev, “Quantum-dimensional laser with single heterojunction”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:11 (1986), 664–668 |
27. |
A. N. Baranov, B. E. Djurtanov, A. N. Imenkov, Yu. M. Shernyakov, Yu. P. Yakovlev, “Injection ($Ga\,Al\,As\,Sb/Ga\,Sb/Ga\,In\,As\,Sb$) heterolaser with $2^x$-channel wave-guide-(DHS 2KV $\lambda=2$-mu-m), operating at room-temperature”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:9 (1986), 557–561 |
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1985 |
28. |
A. N. Baranov, T. N. Danilova, A. N. Imenkov, B. V. Tsarenkov, Yu. M. Shernyakov, Yu. P. Yakovlev, “Coordinate Dependence of the Difference between the Coefficients of Collision Ionization of Holes and Electrons in a Variband $p{-}n$ Structure”, Fizika i Tekhnika Poluprovodnikov, 19:3 (1985), 502–506 |
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1983 |
29. |
V. N. Bessolov, A. N. Imenkov, S. G. Konnikov, E. A. Posse, V. E. Umanskii, B. V. Tsarenkov, Yu. P. Yakovlev, “Квантовая эффективность пластически и упруго деформированных
варизонных Ga$_{1-x}$Al$_{x}$P $p{-}n$-структур”, Fizika i Tekhnika Poluprovodnikov, 17:12 (1983), 2173–2176 |
30. |
A. N. Baranov, T. N. Danilova, A. N. Imenkov, B. V. Tsarenkov, Yu. M. Shernyakov, Yu. P. Yakovlev, “Спектральная зависимость коэффициента лавинного умножения
в варизонной $p{-}n$-структуре”, Fizika i Tekhnika Poluprovodnikov, 17:4 (1983), 753–755 |
31. |
Y. Y. Abdurakhmanov, V. N. Bessolov, A. N. Imenkov, E. A. Posse, B. V. Tsarenkov, Yu. P. Yakovlev, “Спектры фоточувствительности варизонных Ga$_{1-x}$Al$_{x}$P
$p{-}n$-структур”, Fizika i Tekhnika Poluprovodnikov, 17:1 (1983), 125–128 |
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1974 |
32. |
G. K. Averkieva, A. N. Imenkov, V. D. Prochukhan, Yu. V. Rud', M. Tashtanova, “Electrical properties and photoconductivity of $\mathrm{ZnSiAs}_2$ crystals of $n$-type”, Dokl. Akad. Nauk SSSR, 216:1 (1974), 56–58 |
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1965 |
33. |
M. L. Belle, Yu. A. Valov, N. A. Goryunova, L. B. Zlatkin, A. N. Imenkov, M. M. Kozlov, B. V. Tsarenkov, “Optical and photoelectric properties of single $\mathrm{ZnSiP}_2$ crystals”, Dokl. Akad. Nauk SSSR, 163:3 (1965), 606–608 |
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