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Kvantovaya Elektronika, 1993, Volume 20, Number 9, Pages 839–842 (Mi qe3156)  

This article is cited in 6 scientific papers (total in 6 papers)

Lasers

InAsSb/InAsSbP injection lasers for high-resolution spectroscopy

Yu. P. Yakovleva, A. N. Baranova, A. N. Imenkova, V. V. Sherstneva, E. V. Stepanovb, Ya. Ya. Ponurovskiib

a Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg
b General Physics Institute, Russian Academy of Sciences, Moscow
Full-text PDF (161 kB) Citations (6)
Abstract: Experimental results demonstrate that tunable semiconductor injection lasers based on InAsSb/InAsSbP that emit in the spectral region λ = 3.2 to 3.4 μm can be fabricated. Lasers of this kind have been used for high-resolution molecular spectroscopy at working temperatures of 77 to 160 K. Absorption spectra obtained for methane and ethylene molecules reveal the most important spectroscopic properties of these lasers, including the range of continuous frequency tuning, the tuning rate, the spectral resolution, and the signal-to-noise ratio.
English version:
Quantum Electronics, 1993, Volume 23, Issue 9, Pages 726–729
DOI: https://doi.org/10.1070/QE1993v023n09ABEH003156
Bibliographic databases:
Document Type: Article
UDC: 621.373.826.038.825.4
PACS: 42.55.Px, 42.60.By, 42.60.Jf, 42.60.Fc, 42.62.Fi
Language: Russian


Citation: Yu. P. Yakovlev, A. N. Baranov, A. N. Imenkov, V. V. Sherstnev, E. V. Stepanov, Ya. Ya. Ponurovskii, “InAsSb/InAsSbP injection lasers for high-resolution spectroscopy”, Kvantovaya Elektronika, 20:9 (1993), 839–842 [Quantum Electron., 23:9 (1993), 726–729]
Linking options:
  • https://www.mathnet.ru/eng/qe3156
  • https://www.mathnet.ru/eng/qe/v20/i9/p839
  • This publication is cited in the following 6 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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