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This article is cited in 6 scientific papers (total in 6 papers)
Lasers
InAsSb/InAsSbP injection lasers for high-resolution spectroscopy
Yu. P. Yakovleva, A. N. Baranova, A. N. Imenkova, V. V. Sherstneva, E. V. Stepanovb, Ya. Ya. Ponurovskiib a Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg
b General Physics Institute, Russian Academy of Sciences, Moscow
Abstract:
Experimental results demonstrate that tunable semiconductor injection lasers based on InAsSb/InAsSbP that emit in the spectral region λ = 3.2 to 3.4 μm can be fabricated. Lasers of this kind have been used for high-resolution molecular spectroscopy at working temperatures of 77 to 160 K. Absorption spectra obtained for methane and ethylene molecules reveal the most important spectroscopic properties of these lasers, including the range of continuous frequency tuning, the tuning rate, the spectral resolution, and the signal-to-noise ratio.
Citation:
Yu. P. Yakovlev, A. N. Baranov, A. N. Imenkov, V. V. Sherstnev, E. V. Stepanov, Ya. Ya. Ponurovskii, “InAsSb/InAsSbP injection lasers for high-resolution spectroscopy”, Kvantovaya Elektronika, 20:9 (1993), 839–842 [Quantum Electron., 23:9 (1993), 726–729]
Linking options:
https://www.mathnet.ru/eng/qe3156 https://www.mathnet.ru/eng/qe/v20/i9/p839
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Abstract page: | 299 | Full-text PDF : | 75 |
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