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Publications in Math-Net.Ru |
Citations |
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1995 |
| 1. |
V. B. Sigachev, M. E. Doroshenko, T. T. Basiev, G. B. Lutts, B. H. Chai, “Sensitisation of the luminescence of Er<sup>3+</sup> and Ho<sup>3+</sup> ions by Cr<sup>4+</sup> ions in a Y<sub>2</sub>SiO<sub>5</sub> crystal”, Kvantovaya Elektronika, 22:1 (1995), 33–36  [Quantum Electron., 25:1 (1995), 27–30  ] |
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1993 |
| 2. |
M. E. Doroshenko, V. V. Osiko, V. B. Sigachev, M. I. Timoshechkin, “Efficient lasing near 1.4 μm in a (Cr, Ce, Nd):Gd<sub>3</sub>Ga<sub>5</sub>O<sub>12</sub> crystal”, Kvantovaya Elektronika, 20:6 (1993), 569–573 [Quantum Electron., 23:6 (1993), 490–493 ] |
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1992 |
| 3. |
M. E. Doroshenko, M. A. Ivanov, V. B. Sigachev, M. I. Timoshechkin, “Influence of Ce<sup>3+</sup> ions on the spectroscopic and lasing properties of Y<sub>3</sub>Al<sub>5</sub>O<sub>12</sub>:Ce<sup>3+</sup>:Er<sup>3+</sup> and Gd<sub>3</sub>Ga<sub>5</sub>O<sub>12</sub>:Ce<sup>3+</sup>:Er<sup>3+</sup> crystals”, Kvantovaya Elektronika, 19:7 (1992), 638–640 [Sov J Quantum Electron, 22:7 (1992), 588–590 ] |
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1991 |
| 4. |
M. E. Doroshenko, V. V. Osiko, V. B. Sigachev, M. I. Timoshechkin, “Efficient neodymium-doped gadolinium gallium garnet crystal laser”, Kvantovaya Elektronika, 18:7 (1991), 799–802 [Sov J Quantum Electron, 21:7 (1991), 724–727 ] |
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| 5. |
M. E. Doroshenko, V. V. Osiko, V. B. Sigachev, M. I. Timoshechkin, “Stimulated emission from a neodymium-doped gadolinium gallium garnet crystal due to the <sup>4</sup><i>F</i><sub>3/2</sub>–<sup>4</sup><i>I</i><sub>13/2</sub> (λ = 1.33 μm) transition”, Kvantovaya Elektronika, 18:3 (1991), 298–300 [Sov J Quantum Electron, 21:3 (1991), 266–268 ] |
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V. V. Osiko, V. B. Sigachev, V. I. Strelov, M. I. Timoshechkin, “Erbium gadolinium gallium garnet crystal laser”, Kvantovaya Elektronika, 18:2 (1991), 179–181 [Sov J Quantum Electron, 21:2 (1991), 159–160 ] |
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