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This article is cited in 2 scientific papers (total in 2 papers)
Solid-state and semiconductor lasers
Stimulated emission from a neodymium-doped gadolinium gallium garnet crystal due to the 4F3/2–4I13/2 (λ = 1.33 μm) transition
M. E. Doroshenko, V. V. Osiko, V. B. Sigachev, M. I. Timoshechkin
Abstract:
The development of a neodymium-doped gadolinium gallium garnet (GGG:Nd) crystal laser utilizing the 4F3/2–4I13/2 transition (lasing wavelength λ = 1330 nm) is reported. A GGG:Nd crystal 8 mm in diameter and 80 mm long was operated under free-running multimode conditions, using an exit mirror with the reflection coefficient R = 81%. The lasing threshold was 5 J and the differential efficiency was 1.54%. A pump pulse of energy Ep = 34.2 J generated a laser radiation pulse of energy El = 417 mJ. When the pump pulse repetition frequency was 50 Hz and the energy was 64 J, the average free-running power was ~ 40 W. The experimental dependences El (Ep, R) were used to estimate the loss factor κ, the lasing transition cross section σ, and the maximum differential efficiency η0. The following values of these parameters were obtained: κ ≈ 0.09, σ = (1.1 ± 0.2) X 10–19 cm2, and η0 = 2.2%.
Received: 19.10.1990
Citation:
M. E. Doroshenko, V. V. Osiko, V. B. Sigachev, M. I. Timoshechkin, “Stimulated emission from a neodymium-doped gadolinium gallium garnet crystal due to the 4F3/2–4I13/2 (λ = 1.33 μm) transition”, Kvantovaya Elektronika, 18:3 (1991), 298–300 [Sov J Quantum Electron, 21:3 (1991), 266–268]
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https://www.mathnet.ru/eng/qe3777 https://www.mathnet.ru/eng/qe/v18/i3/p298
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