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Publications in Math-Net.Ru |
Citations |
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1979 |
1. |
V. I. Molochev, K. N. Narzullaev, V. V. Nikitin, A. I. Petrov, A. S. Semenov, “Effect of the active region width in GaAs semiconductor injection lasers on single-frequency stimulated emission conditions”, Kvantovaya Elektronika, 6:4 (1979), 797–802 [Sov J Quantum Electron, 9:4 (1979), 472–475] |
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1978 |
2. |
V. S. Kargapol'tsev, E. P. Malygin, V. K. Malyshev, V. I. Molochev, K. N. Narzullaev, V. V. Nikitin, A. S. Semenov, O. N. Talenskiĭ, “Radiative characteristics of a single-channel GaAs injection laser”, Kvantovaya Elektronika, 5:1 (1978), 211–214 [Sov J Quantum Electron, 8:1 (1978), 130–132] |
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1977 |
3. |
N. G. Basov, V. S. Kargapol'tsev, E. P. Malygin, V. K. Malyshev, V. I. Molochev, K. N. Narzullaev, V. V. Nikitin, A. S. Semenov, O. N. Talenskiĭ, “Single-frequency GaAs injection laser”, Kvantovaya Elektronika, 4:8 (1977), 1815–1816 [Sov J Quantum Electron, 7:8 (1977), 1034] |
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