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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
F. F. Komarov, S. B. Lastovsky, I. A. Romanov, I. N. Parkhomenko, L. A. Vlasukova, G. D. Ivlev, Y. Berencen, A. A. Tsivako, N. S. Koval'chuk, E. Wendler, “Te-hyperdoped silicon layers for visible-to-infrared photodiodes”, Zhurnal Tekhnicheskoi Fiziki, 91:12 (2021), 2026–2037   |
| 2. |
F. F. Komarov, I. N. Parkhomenko, O. V. Milchanin, G. D. Ivlev, L. A. Vlasukova, Yu. Żuk, A. A. Tsivako, N. S. Koval'chuk, “Effect of pulsed laser annealing on optical properties of selenium-hyperdoped silicon”, Optics and Spectroscopy, 129:8 (2021), 1037–1047 ; Optics and Spectroscopy, 129:10 (2021), 1114–1124 |
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2020 |
| 3. |
G. D. Ivlev, V. A. Zaikov, I. M. Klimovich, F. F. Komarov, O. R. Lyudchik, “Nanosecond action of intensive laser radiation on thin TiAlN films”, Optics and Spectroscopy, 128:1 (2020), 144–150 ; Optics and Spectroscopy, 128:1 (2020), 141–147 |
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2019 |
| 4. |
R. I. Batalov, V. I. Nuzhdin, V. F. Valeev, N. I. Nurgazizov, A. A. Bukharaev, G. D. Ivlev, A. L. Stepanov, “Photoelectric properties of composite Si layers with Ag nanoparticles obtained by ion implantation and laser annealing”, Optics and Spectroscopy, 126:2 (2019), 214–219 ; Optics and Spectroscopy, 126:2 (2019), 144–149 |
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| 5. |
V. A. Volodin, G. K. Krivyakin, G. D. Ivlev, S. L. Prokopyev, S. V. Gusakova, A. A. Popov, “Crystallization of amorphous germanium films and multilayer $a$-Ge/$a$-Si structures upon exposure to nanosecond laser radiation”, Fizika i Tekhnika Poluprovodnikov, 53:3 (2019), 423–429 ; Semiconductors, 53:3 (2019), 400–405 |
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2018 |
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R. I. Batalov, V. V. Vorobev, V. I. Nuzhdin, V. F. Valeev, D. A. Bizyaev, A. A. Bukharaev, R. M. Bayazitov, Yu. N. Osin, G. D. Ivlev, A. L. Stepanov, “The effect of pulsed laser radiation on a Si layer with a high dose of implanted Ag$^{+}$ ions”, Optics and Spectroscopy, 124:4 (2018), 549–555 ; Optics and Spectroscopy, 125:4 (2018), 571–577 |
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1995 |
| 7. |
E. I. Gatskevich, G. D. Ivlev, A. M. Chaplanov, “Melting and solidification of the surface layer of single-crystal silicon heated by pulsed laser radiation”, Kvantovaya Elektronika, 22:8 (1995), 805–810 [Quantum Electron., 25:8 (1995), 774–779  ] |
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1992 |
| 8. |
L. P. Avakyants, G. D. Ivlev, E. D. Obraztsova, “Raman scattering in laser-crystallized silicon”, Fizika Tverdogo Tela, 34:11 (1992), 3334–3338 |
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1988 |
| 9. |
G. D. Ivlev, V. L. Malevich, “Heating and melting of single-crystal germanium by nanosecond laser pulses”, Kvantovaya Elektronika, 15:12 (1988), 2584–2586 [Sov J Quantum Electron, 18:12 (1988), 1626–1627 ] |
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1985 |
| 10. |
I. M. Romanov, G. D. Ivlev, B. A. Budkevich, V. A. Pilipovich, I. A. Ges', S. P. Zhvavyĭ, “Effect of the pulsive laser-emission on electrochrome film characteristics”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:2 (1985), 122–125 |
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1984 |
| 11. |
I. M. Romanov, G. D. Ivlev, B. A. Budkevich, V. A. Pilipovich, I. A. Ges', S. P. Zhvavyĭ, “INFLUENCE OF IMPULSE LASER-RADIATION ON CHARACTERISTICS OF ELECTROCHROME
FILMS”, Zhurnal Tekhnicheskoi Fiziki, 54:12 (1984), 2366–2368 |
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| Organisations |
- Institute of Electronics, National Academy of Sciences of Belarus, Minsk
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