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This article is cited in 3 scientific papers (total in 3 papers)
Plasmonics
The effect of pulsed laser radiation on a Si layer with a high dose of implanted Ag$^{+}$ ions
R. I. Batalova, V. V. Vorobevb, V. I. Nuzhdina, V. F. Valeeva, D. A. Bizyaeva, A. A. Bukharaeva, R. M. Bayazitova, Yu. N. Osinb, G. D. Ivlevc, A. L. Stepanova a Zavoisky Kazan Physical-Technical Institute, Federal Research Center "Kazan Scientific Center of Russian Academy of Sciences", 420029, Kazan, Russia
b Interdisciplinary Center "Analytical Microscopy", Kazan Federal University, 420000, Kazan, Russia
c Belarusian State University, 220030, Minsk, Belarus
Abstract:
With the purpose of creating a thin composite layer of Ag:Si containing Ag nanoparticles (NPs), the effect of a nanosecond pulse produced by ruby laser ($\lambda$ = 0.694 $\mu$m) on single-crystal $c$-Si implanted with a high dose of Ag$^{+}$ ions is studied. The pulsed laser annealing (PLA) is carried out with an energy density exceeding the melting threshold of amorphous $а$-Si ($W\ge$ 1.2 J/cm$^2$). During the PLA, temporal dynamics of reflectivity $R(t)$ of probing laser radiation ($\lambda$ = 1.064 $\mu$m) from the Ag:Si layer is explored and compared to data on the melt existence time obtained by the computer simulation. The morphology of the surface, crystallinity, and spectral optical reflection $R(\lambda) of Ag:Si layers subject to PLA are studied. PLA is found to cause melting and subsequent crystallization of the implanted $а$-Si with ion-synthesized Ag NPs. In addition, a decrease of the surface roughness from 9 to 3--4 nm and redistribution of Ag NP sizes into two fractions--fine (5--15 nm) and larger (40--60 nm)--are observed. The weakening of plasmon intensity Ag NPs in Si ($\lambda_{\mathrm{max}}$ = 835 nm) is observed in $R(\lambda)$ spectra of an Ag:Si layer after PLA as compared with the initial implanted surface. This weakening may be caused by a decrease in concentration of Ag atoms in the immediate proximity to the surface as a result of Ag impurity partial diffusion within the melted layer, as well as Ag partial evaporation during the PLA.
Received: 19.06.2018
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