Metodicheskie rekomendatsii po opredeleniyu sovokupnoi stoimosti razrabotki i vnedreniya informatsionno-tekhnicheskikh kompleksov slozhnykh sistem na rannikh etapakh proektirovaniya / A. V. Shustov, O. A. Slavin ; Rossiiskaya akademiya nauk, Institut sistemnogo analiza. - Moskva : Lenand, 2007. - 74 s.; ISBN 978-5-9710-0154-6
Sistemnye issledovaniya i kontseptualnoe proektirovanie aviatsionnoi i aviatsionno-kosmicheskoi tekhniki : k 60-letiyu NIO - 10 TsAGI / V. I. Buzuluk, V. D. Vermel, I. P. Dmitrenko [i dr.] ; otv. red. A. V. Shustov. - Moskva : Innovatsionnoe mashinostroenie, 2022. - 453 s.; ISBN 978-5-907523-11-1
V. I. Dolinina, S. V. Ivanov, I. B. Kovsh, A. N. Kucherov, N. K. Makashev, B. A. Pen'kov, B. M. Urin, A. V. Shustov, “Simulation of the output characteristics and propagation of radiation from a CO laser with a selection cell”, Kvantovaya Elektronika, 23:6 (1996), 521–526 [Quantum Electron., 26:6 (1996), 506–511]
1988
2.
O. V. Bogdankevich, V. O. Davydov, Yu. A. Kudeyarov, M. M. Zverev, V. N. Faĭfer, A. V. Shustov, “Characteristics of the evolution of lasing in electron-beam-pumped semiconductor lasers”, Kvantovaya Elektronika, 15:12 (1988), 2504–2507 [Sov J Quantum Electron, 18:12 (1988), 1572–1574]
Yu. A. Kudeyarov, S. I. Novikova, A. V. Shustov, “Thermal expansion of sphalerite type semiconductive binary compounds”, Fizika Tverdogo Tela, 26:9 (1984), 2860–2862
1983
4.
Yu. A. Kudeyarov, S. I. Novikova, A. V. Shustov, “On anomalous thermal properties of crystalline silicon”, Fizika Tverdogo Tela, 25:8 (1983), 2538–2540
5.
Yu. A. Kudeyarov, S. I. Novikova, A. V. Shustov, “Change in specific volume of silicon and germanium on melting”, TVT, 21:3 (1983), 460–463; High Temperature, 21:3 (1983), 345–348
1996
6.
V. I. Dolinina, S. V. Ivanov, I. B. Kovsh, A. N. Kucherov, N. K. Makashev, B.A. Pen'kov, B. M. Urin, A. V. Shustov, “Erratum: Simulation of the output characteristics and propagation of radiation from a CO laser with a selection cell [<i>Quantum Electronics</i> <b>26</b> (6) 506–511 (1996)]”, Kvantovaya Elektronika, 23:11 (1996), 1056
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