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Publications in Math-Net.Ru |
Citations |
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1993 |
| 1. |
N. Shokhudzhaev, I. Ismailov, A. Faĭzullaev, “Injection lasers made from graded-interface GalnAsP/lnP heterostructures”, Kvantovaya Elektronika, 20:3 (1993), 219–221  [Quantum Electron., 23:3 (1993), 186–188  ] |
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1988 |
| 2. |
D. Akhmedov, I. Ismailov, N. Shokhudzhaev, “Service life characteristics of GaInAsP/InP heterostructure lasers emitting short-wavelength radiation”, Kvantovaya Elektronika, 15:2 (1988), 283–285 [Sov J Quantum Electron, 18:2 (1988), 178–180 ] |
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1986 |
| 3. |
P. G. Eliseev, B. N. Sverdlov, I. Ismailov, N. Shokhudzhaev, “Influence of anlsotropic deformation on radiative characteristics of GaInAsP/InP injection lasers. II. Spectral characteristics and discussion”, Kvantovaya Elektronika, 13:8 (1986), 1610–1616 [Sov J Quantum Electron, 16:8 (1986), 1051–1055 ] |
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| 4. |
P. G. Eliseev, B. N. Sverdlov, I. Ismailov, N. Shokhudzhaev, “Influence of anisotropic deformation on the radiative characteristics of GaInAsP/InP injection lasers. I. Lasing threshold, polarization, and wattampere characteristic”, Kvantovaya Elektronika, 13:8 (1986), 1603–1609 [Sov J Quantum Electron, 16:8 (1986), 1046–1050 ] |
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| 5. |
D. Akhmedov, V. P. Duraev, E. V. Golikova, I. Ismailov, N. Shokhudzhaev, “Continuous-wave InGaAsP/InP injection lasers emitting short wavelengths”, Kvantovaya Elektronika, 13:1 (1986), 170–171 [Sov J Quantum Electron, 16:1 (1986), 108–109 ] |
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1984 |
| 6. |
P. G. Eliseev, B. N. Sverdlov, N. Shokhudzhaev, “Reduction of the threshold current of InGaAsP/lnP heterolasers by unidirectional compression”, Kvantovaya Elektronika, 11:8 (1984), 1665–1667 [Sov J Quantum Electron, 14:8 (1984), 1120–1121 ] |
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1982 |
| 7. |
D. Akhmedov, I. Ismailov, N. Shokhudzhaev, “Fabrication and investigation of GaInPAs/InP heterolasers”, Kvantovaya Elektronika, 9:12 (1982), 2402–2406 [Sov J Quantum Electron, 12:12 (1982), 1568–1570 ] |
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1979 |
| 8. |
R. Altynbaev, P. G. Eliseev, I. Ismailov, G. Li, N. Shokhudzhaev, “Diode simulators of solid-state lasers”, Kvantovaya Elektronika, 6:12 (1979), 2617–2618 [Sov J Quantum Electron, 9:12 (1979), 1550–1551] |
| 9. |
R. Altynbaev, I. Ismailov, G. Li, I. Tsidulko, N. Shokhudzhaev, “Investigation of InP-lnGaPAs heterojunction lasers and light-emitting diodes operating in the 1.0–1.2 <i>μ</i> range”, Kvantovaya Elektronika, 6:11 (1979), 2436–2439 [Sov J Quantum Electron, 9:11 (1979), 1435–1437] |
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1977 |
| 10. |
I. Ismailov, N. Shokhudzhaev, D. Akhmedov, P. G. Eliseev, “Characteristics of <i>n</i>-GaP<sub><i>x</i></sub> As<sub>1–<i>x</i></sub>–<i>p</i>Ga<sub>1–<i>y</i></sub>Al<sub><i>y</i></sub>P<sub><i>x</i></sub>As<sub>1–<i>x</i></sub> heterojunction lasers emitting visible radiation”, Kvantovaya Elektronika, 4:8 (1977), 1821–1823 [Sov J Quantum Electron, 7:8 (1977), 1039–1040] |
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1976 |
| 11. |
R. Altynbaev, L. M. Dolginov, L. V. Druzhinina, P. G. Eliseev, I. Ismailov, N. Shokhudzhaev, “Investigation of Al<sub><i>x</i></sub>Ga<sub>1–<i>x</i></sub>As injection heterolasers emitting visible radiation”, Kvantovaya Elektronika, 3:5 (1976), 1080–1084 [Sov J Quantum Electron, 6:5 (1976), 577–579] |
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1975 |
| 12. |
I. Ismailov, A. Sadiev, R. Altynbaev, N. Shokhudzhaev, “Characteristics of diffused InP and lnP<sub><i>x</i></sub>As<sub>1–<i>x</i></sub> laser diodes”, Kvantovaya Elektronika, 2:4 (1975), 814–819 [Sov J Quantum Electron, 5:4 (1975), 451–454] |
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1974 |
| 13. |
I. Ismailov, A. Sadiev, N. Shokhudzhaev, “lnP<sub>0.92</sub>As<sub>0.08</sub> injection laser”, Kvantovaya Elektronika, 1:8 (1974), 1875–1877 [Sov J Quantum Electron, 4:8 (1975), 1046–1047] |
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