|
This article is cited in 2 scientific papers (total in 2 papers)
Brief Communications
Characteristics of diffused InP and lnPxAs1–x laser diodes
I. Ismailov, A. Sadiev, R. Altynbaev, N. Shokhudzhaev
Abstract:
The main characteristics of InP and lnPxAs1–x injection laser diodes were determined at 4.2 and 77°K. The spectral, threshold, power, temporal, and spatial properties of the laser radiation were investigated in the wavelength range λ= 900–1100 nm. The best results at 77°K were obtained for InP lasers whose characteristics included a threshold current density of 1.7 kA/cm2, an output power of 16 W, and an efficiency of 26%.
Received: 18.09.1974
Citation:
I. Ismailov, A. Sadiev, R. Altynbaev, N. Shokhudzhaev, “Characteristics of diffused InP and lnPxAs1–x laser diodes”, Kvantovaya Elektronika, 2:4 (1975), 814–819 [Sov J Quantum Electron, 5:4 (1975), 451–454]
Linking options:
https://www.mathnet.ru/eng/qe11112 https://www.mathnet.ru/eng/qe/v2/i4/p814
|
|