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Kvantovaya Elektronika, 1975, Volume 2, Number 4, Pages 814–819 (Mi qe11112)  

This article is cited in 2 scientific papers (total in 2 papers)

Brief Communications

Characteristics of diffused InP and lnPxAs1–x laser diodes

I. Ismailov, A. Sadiev, R. Altynbaev, N. Shokhudzhaev
Full-text PDF (974 kB) Citations (2)
Abstract: The main characteristics of InP and lnPxAs1–x injection laser diodes were determined at 4.2 and 77°K. The spectral, threshold, power, temporal, and spatial properties of the laser radiation were investigated in the wavelength range λ= 900–1100 nm. The best results at 77°K were obtained for InP lasers whose characteristics included a threshold current density of 1.7 kA/cm2, an output power of 16 W, and an efficiency of 26%.
Received: 18.09.1974
English version:
Soviet Journal of Quantum Electronics, 1975, Volume 5, Issue 4, Pages 451–454
DOI: https://doi.org/10.1070/QE1975v005n04ABEH011112
Document Type: Article
UDC: 621.378.35
PACS: 42.60.J
Language: Russian


Citation: I. Ismailov, A. Sadiev, R. Altynbaev, N. Shokhudzhaev, “Characteristics of diffused InP and lnPxAs1–x laser diodes”, Kvantovaya Elektronika, 2:4 (1975), 814–819 [Sov J Quantum Electron, 5:4 (1975), 451–454]
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  • https://www.mathnet.ru/eng/qe/v2/i4/p814
  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Квантовая электроника Quantum Electronics
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