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Publications in Math-Net.Ru |
Citations |
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2004 |
1. |
D. S. Mamedov, A. A. Marmalyuk, D. B. Nikitin, S. D. Yakubovich, V. V. Prokhorov, “Double-pass superluminescent multilayer quantum-well (GaAl)As heterostructure diodes with a reduced power consumption”, Kvantovaya Elektronika, 34:3 (2004), 206–208 [Quantum Electron., 34:3 (2004), 206–208 ] |
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2002 |
2. |
P. V. Bulaev, O. I. Govorkov, I. D. Zalevskii, V. G. Krigel, A. A. Marmalyuk, D. B. Nikitin, A. A. Padalitsa, A. V. Petrovskii, “Influence of features of QW InGaAs/(Al)GaAs heterostructures grown by MOCVD on the emission spectrum of single-mode laser diodes”, Kvantovaya Elektronika, 32:3 (2002), 216–218 [Quantum Electron., 32:3 (2002), 216–218 ] |
3. |
P. V. Bulaev, A. A. Marmalyuk, A. A. Padalitsa, D. B. Nikitin, A. V. Petrovskii, I. D. Zalevskii, V. P. Konyaev, V. V. Os'kin, M. V. Zverkov, V. A. Simakov, G. M. Zverev, “High-power semiconductor 0.89 – 1.06-μm lasers with a low emission divergence based on strained quantum-well InGaAs/(Al)GaAs structures”, Kvantovaya Elektronika, 32:3 (2002), 213–215 [Quantum Electron., 32:3 (2002), 213–215 ] |
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4. |
P. V. Bulaev, O. I. Govorkov, I. D. Zalevskii, V. G. Krigel, A. A. Marmalyuk, D. B. Nikitin, A. A. Padalitsa, A. V. Petrovskii, “Errata to the article: Influence of features of QW InGaAs/(Al)GaAs heterostructures grown by MOCVD on the emission spectrum of single-mode laser diodes”, Kvantovaya Elektronika, 32:6 (2002), 564 |
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