Double-pass superluminescent multilayer quantum-well (GaAl)As heterostructure diodes with a reduced power consumption

Superluminescent diodes (SLDs) based on a three-layer quantum-well (GaAl)As heterostructure with a bent active channel emitting in the spectral range from 820 to 840 nm are studied. The diodes can operate without thermal stabilisation in the temperature range between -55 and +93 °C emitting 0.1 mW of optical power at the output of a single-mode fibre. They offer a significant advantage in operating currents and power consumption over conventional SLDs based on a bulk separate-confinement double heterostructure.