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This article is cited in 1 scientific paper (total in 1 paper)
Lasers
Double-pass superluminescent multilayer quantum-well (GaAl)As heterostructure diodes with a reduced power consumption
D. S. Mamedova, A. A. Marmalyukb, D. B. Nikitinb, S. D. Yakubovicha, V. V. Prokhorova a Superlum Diodes Ltd., Moscow
b "Sigm Plyus" Ltd., Moscow
Abstract:
Superluminescent diodes (SLDs) based on a three-layer quantum-well (GaAl)As heterostructure with a bent active channel emitting in the spectral range from 820 to 840 nm are studied. The diodes can operate without thermal stabilisation in the temperature range between -55 and +93 °C emitting 0.1 mW of optical power at the output of a single-mode fibre. They offer a significant advantage in operating currents and power consumption over conventional SLDs based on a bulk separate-confinement double heterostructure.
Received: 29.10.2003
Citation:
D. S. Mamedov, A. A. Marmalyuk, D. B. Nikitin, S. D. Yakubovich, V. V. Prokhorov, “Double-pass superluminescent multilayer quantum-well (GaAl)As heterostructure diodes with a reduced power consumption”, Kvantovaya Elektronika, 34:3 (2004), 206–208 [Quantum Electron., 34:3 (2004), 206–208]
Linking options:
https://www.mathnet.ru/eng/qe2612 https://www.mathnet.ru/eng/qe/v34/i3/p206
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Abstract page: | 161 | Full-text PDF : | 76 | First page: | 1 |
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