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Publications in Math-Net.Ru |
Citations |
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2017 |
| 1. |
M. I. Vas'kovskaya, V. V. Vasil'ev, S. A. Zibrov, V. L. Velichansky, I. V. Akimova, A. P. Bogatov, A. E. Drakin, “Amplitude/phase modulation and spectrum of the vertical-cavity surface-emitting laser output”, Kvantovaya Elektronika, 47:9 (2017), 835–841   [Quantum Electron., 47:9 (2017), 835–841   ] |
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2008 |
| 2. |
D. R. Miftakhutdinov, I. V. Akimova, A. P. Bogatov, T. I. Gushchik, A. E. Drakin, N. V. D'yachkov, V. V. Popovichev, A. P. Nekrasov, “Radiation parameters of ridge lasers at high pump currents”, Kvantovaya Elektronika, 38:11 (2008), 993–1000 [Quantum Electron., 38:11 (2008), 993–1000 ] |
10
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2005 |
| 3. |
S. A. Plisyuk, I. V. Akimova, A. E. Drakin, A. V. Borodaenko, A. A. Stratonnikov, V. V. Popovichev, A. P. Bogatov, “Quality of the optical beam of a high-power, single-mode, 0.81-μm ridge AlGaAs heterolaser”, Kvantovaya Elektronika, 35:6 (2005), 515–519 [Quantum Electron., 35:6 (2005), 515–519 ] |
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1998 |
| 4. |
I. V. Akimova, P. G. Eliseev, M. A. Osinski, “High-temperature properties of InGaN light-emitting diodes”, Kvantovaya Elektronika, 25:11 (1998), 1013–1016 [Quantum Electron., 28:11 (1998), 987–990 ] |
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| 5. |
I. V. Akimova, A. P. Bogatov, A. E. Drakin, V. P. Konyaev, “Dynamics of the optical damage of output mirrors of ridge semiconductor lasers based on strained quantum-well heterostructures”, Kvantovaya Elektronika, 25:7 (1998), 647–650 [Quantum Electron., 28:7 (1998), 629–632 ] |
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| 6. |
P. G. Eliseev, I. V. Akimova, “Emission from quantum-well InGaAs structures”, Kvantovaya Elektronika, 25:3 (1998), 206–210 [Quantum Electron., 28:3 (1998), 198–202 ] |
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1996 |
| 7. |
I. V. Akimova, P. G. Eliseev, M. A. Osinski, P. Perlin, “Spontaneous emission from a quantum-well GaN/InGaN/AlGaN heterostructure at high pump currents”, Kvantovaya Elektronika, 23:12 (1996), 1069–1071 [Quantum Electron., 26:12 (1996), 1039–1041 ] |
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1995 |
| 8. |
P. G. Eliseev, G. Beister, A. E. Drakin, I. V. Akimova, G. Erbert, J. Maege, J. Sebastian, “Power hysteresis and waveguide bistability of stripe quantum-well InGaAsGaAsGaAIAs heterolasers with a strained active layer”, Kvantovaya Elektronika, 22:4 (1995), 309–320 [Quantum Electron., 25:4 (1995), 291–301 ] |
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1994 |
| 9. |
I. V. Akimova, P. G. Eliseev, V. P. Konyaev, V. I. Shveikin, “Spectral investigation of the radiation emitted by strained InGaAs/GaAlAs quantum-well heterostructures”, Kvantovaya Elektronika, 21:5 (1994), 405–408 [Quantum Electron., 24:5 (1994), 373–376 ] |
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1989 |
| 10. |
I. V. Akimova, M. G. Vasil'ev, E. G. Golikova, A. E. Drakin, P. G. Eliseev, V. I. Romantsevich, B. N. Sverdlov, V. I. Shveĭkin, A. A. Shelyakin, “Low-threshold buried 1.3-μm injection lasers with two-channel lateral confinement and <i>n</i>-type InP substrates”, Kvantovaya Elektronika, 16:3 (1989), 457–462 [Sov J Quantum Electron, 19:3 (1989), 303–306 ] |
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1987 |
| 11. |
I. V. Akimova, A. E. Drakin, V. P. Duraev, P. G. Eliseev, B. I. Makhsudov, B. N. Sverdlov, “Fast degradation defects on reflecting faces of InGaAsP/lnP lasers emitting in the 1.3 μ range”, Kvantovaya Elektronika, 14:1 (1987), 204–205 [Sov J Quantum Electron, 17:1 (1987), 121–122 ] |
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1985 |
| 12. |
I. V. Akimova, A. M. Akhekyan, V. I. Kozlovsky, Yu. V. Korostelin, P. V. Shapkin, “$\mathrm{Te}_{n}$-clusters–centers of effective radiative recombination in $\mathrm{ZnSe}_{1-x}\mathrm{Te}_{x}(x\leqslant 0.2)$”, Fizika Tverdogo Tela, 27:6 (1985), 1734–1741 |
| 13. |
I. V. Akimova, T. I. Berezina, A. N. Pechenov, V. I. Reshetov, L. E. Reshetova, P. V. Shapkin, “Influence of excess sulfur pressure during growth of CdS crystals on the characteristics of electron-beam-excited lasers”, Kvantovaya Elektronika, 12:6 (1985), 1307–1309 [Sov J Quantum Electron, 15:6 (1985), 867–868 ] |
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1982 |
| 14. |
I. V. Akimova, A. V. Dudenkova, V. I. Kozlovsky, Yu. V. Korostelin, A. S. Nasibov, P. V. Reznikov, E. M. Tishina, P. V. Shapkin, “Improvement of the characteristics of ZnSe single-crystal semiconductor lasers pumped longitudinally by an electron beam”, Kvantovaya Elektronika, 9:10 (1982), 2099–2102 [Sov J Quantum Electron, 12:10 (1982), 1366–1368 ] |
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1977 |
| 15. |
I. V. Akimova, L. N. Borovich, I. P. Vasilishcheva, A. V. Dudenkova, A. V. Egorov, A. S. Nasibov, O. N. Talenskiĭ, Yu. M. Popov, P. V. Shapkin, “Determination of the depth of the disturbed layer in laser screens made of cadmium sulfide single crystals”, Kvantovaya Elektronika, 4:6 (1977), 1357–1359 [Sov J Quantum Electron, 7:6 (1977), 765–767] |
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