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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
I. V. Bondar', A. A. Feshchenko, V. V. Khoroshko, V. N. Pavlovskii, I. E. Svitsiankou, G. P. Yablonskii, “Temperature dependence of the band gap of AgIn$_{8}$S$_{12.5}$ single crystals”, Fizika i Tekhnika Poluprovodnikov, 55:8 (2021), 669–672   |
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2020 |
| 2. |
I. E. Svitsiankou, V. N. Pavlovskii, E. V. Muravitskaya, E. V. Lutsenko, G. P. Yablonskii, O. M. Borodavchenko, V. D. Zhivulko, A. V. Mudryi, M. V. Yakushev, S. O. Kognovitckii, “Spontaneous and stimulated emission in thin films of Cu(In$_{1-x}$Ga$_{x}$)(S$_{y}$Se$_{1-y}$)$_{2}$ solid solutions in the ñomposition of solar cells”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1058–1065 ; Semiconductors, 54:10 (2020), 1247–1253 |
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2019 |
| 3. |
I. V. Bondar', B. T. Chan, V. N. Pavlovskii, I. E. Svitsiankou, G. P. Yablonskii, “Temperature dependence of the band gap of MnAgIn$_{7}$S$_{12}$ single crystals”, Fizika i Tekhnika Poluprovodnikov, 53:12 (2019), 1621–1624 ; Semiconductors, 53:12 (2019), 1593–1596 |
| 4. |
M. S. Leanenia, A. V. Nagorny, B. D. Urmanov, V. A. Shulenkova, G. P. Yablonskii, “Stable random lasing in CdSSe micropowders”, Kvantovaya Elektronika, 49:6 (2019), 552–555 [Quantum Electron., 49:6 (2019), 552–555   ] |
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| 5. |
E. V. Lutsenko, N. V. Rzheutskii, A. G. Voinilovich, I. E. Svitsiankou, A. V. Nagorny, V. A. Shulenkova, G. P. Yablonskii, A. N. Alekseev, S. I. Petrov, Ya. A. Solov'ev, A. N. Pyatlitski, D. V. Zhigulin, V. A. Solodukha, “Stimulated emission of AlGaN layers grown on sapphire substrates using ammonia molecular beam epitaxy”, Kvantovaya Elektronika, 49:6 (2019), 540–544 [Quantum Electron., 49:6 (2019), 540–544 ] |
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2018 |
| 6. |
I. E. Svitsiankou, V. N. Pavlovskii, E. V. Lutsenko, G. P. Yablonskii, V. Y. Shiripov, E. A. Khokhlov, A. V. Mudryi, V. D. Zhivulko, O. M. Borodavchenko, M. V. Yakushev, “Luminescence and stimulated emission of polycrystalline Cu(In,Ga)Se$_{2}$ films deposited by magnetron-assisted sputtering”, Fizika i Tekhnika Poluprovodnikov, 52:10 (2018), 1120–1125 ; Semiconductors, 52:10 (2018), 1238–1243 |
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2013 |
| 7. |
E. V. Lutsenko, A. G. Voinilovich, N. V. Rzheutskii, V. N. Pavlovskii, G. P. Yablonskii, S. V. Sorokin, S. V. Gronin, I. V. Sedova, P. S. Kop'ev, S. V. Ivanov, M. Alanzi, A. Hamidalddin, A. Alyamani, “Optically pumped quantum-dot Cd(Zn)Se/ZnSe laser and microchip converter for yellow–green spectral region”, Kvantovaya Elektronika, 43:5 (2013), 418–422 [Quantum Electron., 43:5 (2013), 418–422 ] |
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1992 |
| 8. |
A. L. Gurskiĭ, E. V. Lutsenko, N. K. Morozova, G. P. Yablonskii, “Impurity luminescence of $\mathrm{ZnS}:\mathrm{O}$ single crystals under intense photo and streamer excitation”, Fizika Tverdogo Tela, 34:11 (1992), 3530–3536 |
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1991 |
| 9. |
S. V. Davydov, I. I. Kulak, A. I. Mitskovets, A. A. Stavrov, A. P. Shkadarevich, G. P. Yablonskii, “Lasing in YAG:Nd<sup>3+</sup> and KGdW:Nd<sup>3+</sup> crystals pumped with semiconductor lasers”, Kvantovaya Elektronika, 18:1 (1991), 20–21 [Sov J Quantum Electron, 21:1 (1991), 16–17 ] |
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1989 |
| 10. |
V. P. Gribkovskiĭ, V. V. Parashchuk, G. P. Yablonskii, “Streamer excitation of lasing at high repetition frequencies”, Kvantovaya Elektronika, 16:6 (1989), 1145–1148 [Sov J Quantum Electron, 19:6 (1989), 742–744 ] |
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1988 |
| 11. |
A. F. Bokhonov, L. N. Tvoronovich, G. P. Yablonskii, “Defect formation in $\mathrm{CdS}$ and $\mathrm{ZnSe}$ induced by nitrogen and excimer laser irradiation”, Fizika Tverdogo Tela, 30:6 (1988), 1585–1593 |
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1987 |
| 12. |
A. A. Gladyshchuk, A. L. Gurskiĭ, V. A. Nikitenko, V. V. Parashchuk, G. P. Yablonskii, “Stimulated radiation emitted from streamer discharges in ZnO crystals at 300 K”, Kvantovaya Elektronika, 14:10 (1987), 1983–1985 [Sov J Quantum Electron, 17:10 (1987), 1263–1264 ] |
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1985 |
| 13. |
V. V. Zubritskiĭ, V. A. Zyul'kov, V. S. Chirvonyi, G. P. Yablonskii, V. P. Gribkovskiĭ, “Stimulated radiation emitted from zinc selenide single crystals under streamer excitation conditions”, Kvantovaya Elektronika, 12:4 (1985), 724–728 [Sov J Quantum Electron, 15:4 (1985), 475–477 ] |
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1984 |
| 14. |
G. P. Yablonskii, “Formation of lattice defects in $\mathrm{A}_{2}\mathrm{B}_{6}$ wide gap semiconductors at nitrogen laser irradiation”, Fizika Tverdogo Tela, 26:4 (1984), 995–1001 |
| 15. |
V. A. Ivanov, G. P. Yablonskii, V. P. Gribkovskiĭ, “Dislocation effect on $\mathrm{ZnTe}$ luminescence spectra”, Fizika Tverdogo Tela, 26:3 (1984), 754–757 |
| 16. |
G. P. Yablonskii, “Laser Annealing of Lattice Defects in ZnSe Single Crystals”, Fizika i Tekhnika Poluprovodnikov, 18:5 (1984), 918–920 |
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1981 |
| 17. |
R. A. Baltrameyunas, A. A. Gladyshchuk, V. P. Gribkovskiĭ, È. P. Kuokshtis, G. P. Yablonskii, “Luminescence and lasing of ZnSe single crystals subjected to one- and two-photon excitation”, Kvantovaya Elektronika, 8:4 (1981), 898–901 [Sov J Quantum Electron, 11:4 (1981), 539–541 ] |
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1979 |
| 18. |
V. P. Gribkovskiĭ, V. A. Zaporozhchenko, V. A. Ivanov, A. V. Kachinskiĭ, V. V. Parashchuk, G. P. Yablonskiĭ, “Lasing in ZnTe, ZnSe, and CdS single crystals excited by ruby laser picosecond pulses”, Kvantovaya Elektronika, 6:10 (1979), 2229–2232 [Sov J Quantum Electron, 9:10 (1979), 1305–1307] |
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