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This article is cited in 3 scientific papers (total in 3 papers)
Selection of papers presented at the Symposium 'Semiconductor Lasers: Physics and Technology'
Stimulated emission of AlGaN layers grown on sapphire substrates using ammonia molecular beam epitaxy
E. V. Lutsenkoa, N. V. Rzheutskiia, A. G. Voinilovicha, I. E. Svitsiankoua, A. V. Nagornya, V. A. Shulenkovaa, G. P. Yablonskiia, A. N. Alekseevb, S. I. Petrovb, Ya. A. Solov'evc, A. N. Pyatlitskic, D. V. Zhigulinc, V. A. Solodukhac a Institute of Physics, National Academy of Sciences of Belarus, Minsk
b CJSC 'Scientific and Technical Equipment', Saint-Petersburg
c JSC “INTEGRAL”, Minsk
Abstract:
By optimising the growth temperature of the AlGaN layers and using high-temperature AlN buffer layers, high-quality AlxGa1-xN layers (x = 0.15, 0.21, 0.26, and 0.3) were obtained, in which stimulated emission in the UV spectral range 330–297 nm was implemented with the threshold intensity of excitation Ith ≈ 0.7–1.4 MW cm-2, respectively. It is found that the threshold value of the stimulated emission of AlGaN layers grown by molecular beam epitaxy is largely determined by the intensity of the process of thermal decomposition of GaN, which affects the surface morphology and, consequently, the amount of optical scattering loss. It is shown that no pronounced localisation of nonequilibrium charge carriers occurs in the AlGaN layers, which is manifested in the absence of a large Stokes shift and in the realisation of optical amplification at transitions in an electron-hole plasma, and also indicates a relatively homogeneous material composition.
Keywords:
optical pumping, ultraviolet stimulated emission, AlGaN epitaxial layers, ammonia molecular beam epitaxy.
Received: 04.04.2019
Citation:
E. V. Lutsenko, N. V. Rzheutskii, A. G. Voinilovich, I. E. Svitsiankou, A. V. Nagorny, V. A. Shulenkova, G. P. Yablonskii, A. N. Alekseev, S. I. Petrov, Ya. A. Solov'ev, A. N. Pyatlitski, D. V. Zhigulin, V. A. Solodukha, “Stimulated emission of AlGaN layers grown on sapphire substrates using ammonia molecular beam epitaxy”, Kvantovaya Elektronika, 49:6 (2019), 540–544 [Quantum Electron., 49:6 (2019), 540–544]
Linking options:
https://www.mathnet.ru/eng/qe17060 https://www.mathnet.ru/eng/qe/v49/i6/p540
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Abstract page: | 163 | Full-text PDF : | 31 | References: | 19 | First page: | 5 |
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