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Publications in Math-Net.Ru |
Citations |
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2023 |
| 1. |
H. T. Doan, D. A. Golosov, J. Zhang, N. A. Kananovich, S. M. Zavadski, S. N. Melnikov, “Influence of aluminum doping degree on the properties of titanium-aluminum oxide films”, PFMT, 2023, no. 2(55), 74–82  |
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2022 |
| 2. |
H. T. Doan, D. A. Golosov, V. A. Burdovitsin, S. M. Zavadski, S. N. Melnikov, “Peculiarity of reactive magnetron deposition of tantalum oxide films with different methods of gas supply into the chamber”, PFMT, 2022, no. 3(52), 97–104 |
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2020 |
| 3. |
N. Villa, D. A. Golosov, S. N. Melnikov, T. D. Nguyen, A. D. Golosov, E. E. Litvin, N. N. Lam, “Formation of tantalum oxide films on substrates with a diameter of 200 mm”, PFMT, 2020, no. 1(42), 12–17 |
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2019 |
| 4. |
N. Villa, D. A. Golosov, T. D. Nguyen, “Dielectric properties of tantalum oxide thin films deposited by reactive magnetron sputtering”, PFMT, 2019, no. 2(39), 15–20 |
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2018 |
| 5. |
J. E. Okojie, D. A. Golosov, S. N. Melnikov, S. M. Zavadski, V. V. Kolos, E. A. Poplevka, Yu. A. Zhukovich, “Ferroelectric properties of strontium-bismuth tantalate thin film deposited by RF magnetron sputtering method”, PFMT, 2018, no. 1(34), 33–37 |
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2016 |
| 6. |
D. A. Golosov, S. M. Zavadski, V. V. Kolos, A. S. Turtsevich, “Ferroelectric properties of niobium-doped strontium bismuth tantalate films”, Fizika Tverdogo Tela, 58:1 (2016), 51–55  ; Phys. Solid State, 58:1 (2016), 50–54 |
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| 7. |
A. P. Dostanko, D. A. Golosov, S. M. Zavadski, S. N. Melnikov, J. E. Okojie, J. D. Kotingo, G. M. Ruban, “Formation of titanium nitride films by reactive magnetron sputtering under low pressure”, PFMT, 2016, no. 2(27), 12–17 |
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2010 |
| 8. |
D. A. Golosov, S. N. Melnikov, S. P. Kundas, A. P. Dostanko, “Prediction of targets erosion in magnetron sputtering systems”, PFMT, 2010, no. 2(3), 62–67 |
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