Formation of tantalum oxide films on substrates with a diameter of 200 mm

As a result of studies of the processes of reactive magnetron sputtering of a Ta target in an Ar/O$_2$ working gas mixture, it is found that the formation of dielectric films is observed at the concentration of O$_2$ higher than 50% and it is determined by the enthalpy of oxide formation from the source metal. The use of high-vacuum sputtering allows stabilizing the process without the use of feedback systems. It is shown that when depositing tantalum oxide films on a $\varnothing$ 200 mm rotating substrate, it is possible to obtain layers with a thickness non-uniformity of less than $\pm$2.4%, a capacitance and dielectric loss tangent nonuniformity of less than $\pm$18%.