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Publications in Math-Net.Ru |
Citations |
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2018 |
| 1. |
K. V. Feklistov, A. G. Cherkov, V. P. Popov, L. I. Fedina, “Redistribution of erbium and oxygen recoil atoms and the structure of silicon thin surface layers formed by high-dose argon implantation through Er and SiO$_{2}$ surface films”, Fizika i Tekhnika Poluprovodnikov, 52:13 (2018), 1589–1596   ; Semiconductors, 52:13 (2018), 1696–1703 |
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2017 |
| 2. |
I. E. Tyschenko, A. G. Cherkov, “Diffusion-Controlled growth of Ge nanocrystals in SiO$_{2}$ films under conditions of ion synthesis at high pressure”, Fizika i Tekhnika Poluprovodnikov, 51:10 (2017), 1414–1419 ; Semiconductors, 51:10 (2017), 1364–1369 |
| 3. |
I. E. Tyschenko, A. G. Cherkov, V. A. Volodin, M. Voelskow, “Specific features of the ion-beam synthesis of Ge nanocrystals in SiO$_{2}$ thin films”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1289–1294 ; Semiconductors, 51:9 (2017), 1240–1246 |
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2011 |
| 4. |
V. A. Volodin, A. S. Kacko, A. G. Cherkov, A. V. Latyshev, J. Koch, B. N. Chichkov, “Femtosecond pulse crystallization of thin amorphous hydrogenated films on glass substrates using near ultraviolet laser radiation”, Pis'ma v Zh. Èksper. Teoret. Fiz., 93:10 (2011), 665–668 ; JETP Letters, 93:10 (2011), 603–606   |
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