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Publications in Math-Net.Ru |
Citations |
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2016 |
| 1. |
O. B. Gusev, A. V. Belolipetskiy, I. N. Yassievich, A. V. Kukin, E. E. Terukova, E. I. Terukov, “Lifetime of excitons localized in Si nanocrystals in amorphous silicon”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 639–642   ; Semiconductors, 50:5 (2016), 627–631 |
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| 2. |
Yu. K. Undalov, E. I. Terukov, O. B. Gusev, I. N. Trapeznikova, “On the formation of silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix $a$-SiO$_{x}$:H (0 $<x<$ 2), with time-modulated dc magnetron plasma”, Fizika i Tekhnika Poluprovodnikov, 50:4 (2016), 538–548 ; Semiconductors, 50:4 (2016), 530–540 |
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2011 |
| 3. |
O. B. Gusev, J. S. Vainshtein, Yu. K. Undalov, O. S. Yeltsina, I. N. Trapeznikova, E. I. Terukov, O. M. Sreseli, “Luminescence of amorphous silicon nanoclusters”, Pis'ma v Zh. Èksper. Teoret. Fiz., 94:5 (2011), 402–405 ; JETP Letters, 94:5 (2011), 370–373   |
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| 4. |
O. B. Gusev, A. A. Prokofiev, O. A. Maslova, E. I. Terukov, I. N. Yassievich, “Energy transfer between silicon nanocrystals”, Pis'ma v Zh. Èksper. Teoret. Fiz., 93:3 (2011), 162–165 ; JETP Letters, 93:3 (2011), 147–150 |
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1992 |
| 5. |
O. B. Gusev, M. S. Bresler, N. V. Zotova, N. M. Stus, “Переход от гетороструктур первого типа к гетероструктурам второго типа
в системе InAs/InAsSbP”, Fizika i Tekhnika Poluprovodnikov, 26:4 (1992), 738–741 |
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1991 |
| 6. |
M. S. Bresler, O. B. Gusev, M. P. Mikhailova, V. V. Sherstnev, Yu. P. Yakovlev, I. N. Yassievich, “Интерфейсная люминесценция, обусловленная надбарьерным отражением
в изотипной гетероструктуре $p$-InAs/$P$-InAsPSb”, Fizika i Tekhnika Poluprovodnikov, 25:2 (1991), 298–306 |
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1988 |
| 7. |
M. S. Bresler, O. B. Gusev, I. A. Merkulov, “Luminescence polarization and optical orientation of holes in $\mathrm{PbTe}$ in a stimulated regime”, Fizika Tverdogo Tela, 30:1 (1988), 177–183 |
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1987 |
| 8. |
B. P. Zakharchenya, M. S. Bresler, O. B. Gusev, I. A. Merkulov, “Optical orientation of the charge carriers in semiconductor in the stimulated luminescence regime”, Dokl. Akad. Nauk SSSR, 297:3 (1987), 584–587 |
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1986 |
| 9. |
M. S. Bresler, O. B. Gusev, A. O. Stepanov, “The density of the electron-hole plasma excited in a semiconductor”, Fizika Tverdogo Tela, 28:5 (1986), 1387–1392 |
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1985 |
| 10. |
M. A. Alekseev, M. S. Bresler, O. B. Gusev, I. A. Merkulov, A. O. Stepanov, “Polarization of Luminescence of $n$-InSb in a High Magnetic Field under Two-Photon Pumping”, Fizika i Tekhnika Poluprovodnikov, 19:4 (1985), 722–728 |
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1983 |
| 11. |
M. S. Bresler, O. B. Gusev, A. O. Stepanov, “Спектры люминесценции и разогрев электронов светом в InSb”, Fizika i Tekhnika Poluprovodnikov, 17:7 (1983), 1195–1201 |
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