|
|
|
Publications in Math-Net.Ru |
Citations |
|
2022 |
| 1. |
V. Yu. Nesterov, O. I. Sokolovskaya, L. A. Golovan, D. V. Shuleiko, A. V. Kolchin, D. E. Presnov, P. K. Kashkarov, A. V. Khilov, D. A. Kurakina, M. Yu. Kirillin, E. A. Sergeeva, S. V. Zabotnov, “Laser fragmentation of silicon microparticles in liquids for solution of biophotonics problems”, Kvantovaya Elektronika, 52:2 (2022), 160–170  [Quantum Electron., 52:2 (2022), 160–170   ] |
5
|
|
2020 |
| 2. |
I. V. Bozh'ev, V. A. Krupenin, D. E. Presnov, I. I. Tsiniaikin, A. A. Dorofeev, A. S. Trifonov, “Detection of the electric potential surface distribution with a local probe based on a field effect transistor with a nanowire channel”, Zhurnal Tekhnicheskoi Fiziki, 90:5 (2020), 868–874  ; Tech. Phys., 65:5 (2020), 832–838 |
| 3. |
A. V. Skobelkina, F. V. Kashaev, A. V. Kolchin, D. V. Shuleiko, T. P. Kaminskaya, D. E. Presnov, L. A. Golovan, P. K. Kashkarov, “Silicon nanoparticles formed via pulsed laser ablation of porous silicon in liquids”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:14 (2020), 13–16 ; Tech. Phys. Lett., 46:7 (2020), 687–690 |
12
|
| 4. |
A. V. Kolchin, D. V. Shuleiko, A. V. Pavlikov, S. V. Zabotnov, L. A. Golovan, D. E. Presnov, V. A. Volodin, G. K. Krivyakin, A. A. Popov, P. K. Kashkarov, “Femtosecond laser annealing of multilayer thin-film structures based on amorphous germanium and silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020), 43–46 ; Tech. Phys. Lett., 46:6 (2020), 560–563 |
8
|
|
2019 |
| 5. |
E. A. Lipkova, A. I. Efimova, K. A. Gonchar, D. E. Presnov, A. A. Eliseev, A. N. Lapshin, V. Yu. Timoshenko, “Determination of free charge carrier concentration in arrays of boron doped silicon nanowires using attenuated total reflection infrared spectroscopy”, Fizika i Tekhnika Poluprovodnikov, 53:11 (2019), 1557–1561 ; Semiconductors, 53:11 (2019), 1524–1528 |
2
|
| 6. |
S. V. Zabotnov, A. V. Kolchin, F. V. Kashaev, A. V. Skobelkina, V. Yu. Nesterov, D. E. Presnov, L. A. Golovan, P. K. Kashkarov, “Structural analysis of nanoparticles formed via laser ablation of porous silicon and silicon microparticles in water”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019), 22–25 ; Tech. Phys. Lett., 45:11 (2019), 1085–1088 |
4
|
|
2018 |
| 7. |
D. E. Presnov, S. G. Kafanov, A. A. Dorofeev, I. V. Bozhev, A. S. Trifonov, Yu. A. Pashkin, V. A. Krupenin, “High quality factor mechanical resonance in a silicon nanowire”, Pis'ma v Zh. Èksper. Teoret. Fiz., 108:7 (2018), 522–528 ; JETP Letters, 108:7 (2018), 492–497 |
9
|
| 8. |
D. V. Shuleiko, F. V. Kashaev, F. V. Potemkin, S. V. Zabotnov, A. V. Zoteev, D. E. Presnov, I. N. Parkhomenko, I. A. Romanov, “Structural anisotropy of amorphous silicon films modified by femtosecond laser pulses”, Optics and Spectroscopy, 124:6 (2018), 770–776 ; Optics and Spectroscopy, 124:6 (2018), 801–807 |
3
|
|
2005 |
| 9. |
V. A. Krupenin, D. E. Presnov, V. O. Zalunin, S. A. Vasenko, A. B. Zorin, “Strongly asymmetric single-electron transistor operating as zero-biased electrometer”, Pis'ma v Zh. Èksper. Teoret. Fiz., 82:2 (2005), 82–85 ; JETP Letters, 82:2 (2005), 77–80 |
1
|
|
2001 |
| 10. |
V. A. Krupenin, A. B. Zorin, D. E. Presnov, M. N. Savvateev, J. Niemeyer, “Metallic single-electron transistor without traditional tunnel barriers”, UFN, 171:supplement № 10 (2001), 113–116 ; Phys. Usp., 44:10 suppl. (2001), s113–s116 |
2
|
|
1998 |
| 11. |
E. S. Soldatov, V. V. Khanin, A. S. Trifonov, S. P. Gubin, V. V. Kolesov, D. E. Presnov, S. A. Iakovenko, G. B. Khomutov, A. N. Korotkov, “Room temperature molecular single-electron transistor”, UFN, 168:2 (1998), 217–219 ; Phys. Usp., 41:2 (1998), 202–204 |
26
|
|
1997 |
| 12. |
V. A. Krupenin, S. V. Lotkhov, Yu. A. Pashkin, D. E. Presnov, “An experimental study of charge effects in ultrasmall tunnel junctions”, UFN, 167:5 (1997), 566–568 ; Phys. Usp., 40:5 (1997), 542–544 |
2
|
|
1996 |
| 13. |
D. E. Presnov, V. A. Krupenin, S. V. Lotkhov, “Single-electron structures of supersmall Al/AlO<sub>x</sub>/Al tunnelling junctions: manufacturing techniques and experimental results”, UFN, 166:8 (1996), 906–907 ; Phys. Usp., 39:8 (1996), 847–848 |
|
| Organisations |
|
| |
|
|
Contact us: