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Publications in Math-Net.Ru |
Citations |
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2020 |
| 1. |
B. S. Shvetsov, A. A. Minnekhanov, A. A. Nesmelov, M. N. Martyshov, V. V. Ryl'kov, V. A. Demin, A. V. Emelyanov, “Conductance quantization in memristive structures based on poly-p-xylylene”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 913–917   ; Semiconductors, 54:9 (2020), 1103–1107 |
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2019 |
| 2. |
B. S. Shvetsov, A. N. Matsukatova, A. A. Minnekhanov, A. A. Nesmelov, B. V. Goncharov, D. A. Lapkin, M. N. Martyshov, P. A. Forsh, V. V. Ryl'kov, V. A. Demin, A. V. Emelyanov, “Poly-para-xylylene-based memristors on flexible substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019), 40–43 ; Tech. Phys. Lett., 45:11 (2019), 1103–1106 |
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2018 |
| 3. |
K. N. Denisova, A. S. Ilyin, M. N. Martyshov, A. S. Vorontsov, “Effect of doping on the properties of hydrogenated amorphous silicon irradiated with femtosecond laser pulses”, Fizika Tverdogo Tela, 60:4 (2018), 637–640 ; Phys. Solid State, 60:4 (2018), 640–643 |
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2016 |
| 4. |
A. S. Ilyin, N. P. Fantina, M. N. Martyshov, P. A. Forsh, A. S. Chizhov, M. N. Rumyantseva, A. M. Gaskov, P. K. Kashkarov, “Effect of cadmium-selenide quantum dots on the conductivity and photoconductivity of nanocrystalline indium oxide”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 619–623 ; Semiconductors, 50:5 (2016), 607–611 |
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2007 |
| 5. |
I. A. Belogorohov, M. N. Martyshov, E. V. Tikhonov, M. O. Breusova, V. E. Pushkarev, P. A. Forsh, A. V. Zoteev, L. G. Tomilova, D. R. Khokhlov, “Vibronic and electric properties of semiconductor structures based on butyl-substituted mono-and triphthalocyanine containing erbium ions”, Pis'ma v Zh. Èksper. Teoret. Fiz., 85:12 (2007), 791–794 ; JETP Letters, 85:12 (2007), 655–657   |
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