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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
A. A. Ezhevskii, D. V. Guseinov, A. V. Soukhorukov, E. A. Kalinina, A. V. Novikov, D. V. Yurasov, N. S. Gusev, “Generation of spin currents in $n$-silicon doped with phosphorus, antimony and bismuth and the influence of spin scattering processes with flip on them”, Fizika i Tekhnika Poluprovodnikov, 55:8 (2021), 654–658   |
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2020 |
| 2. |
A. A. Ezhevskii, P. G. Sennikov, D. V. Guseinov, A. V. Soukhorukov, E. A. Kalinina, N. V. Abrosimov, “Behavior of lithium donors in bulk single-crystal isotopically pure $^{28}$Si$_{1-x}$ $^{72}$Ge$_{x}$ alloys”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1134–1138 ; Semiconductors, 54:10 (2020), 1336–1340 |
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| 3. |
A. A. Ezhevskii, P. G. Sennikov, D. V. Guseinov, A. V. Soukhorukov, E. A. Kalinina, N. V. Abrosimov, “Behavior of phosphorus donors in bulk single-crystal monoisotopic $^{28}$Si$_{1-x}$ $^{72}$Ge$_{x}$ alloys”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 933–937 ; Semiconductors, 54:9 (2020), 1123–1126 |
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2016 |
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A. P. Detochenko, S. A. Denisov, M. N. Drozdov, A. I. Mashin, V. A. Gavva, A. D. Bulanov, A. V. Nezhdanov, A. A. Ezhevskii, M. V. Stepikhova, V. Yu. Chalkov, V. N. Trushin, D. V. Shengurov, V. G. Shengurov, N. V. Abrosimov, H. Riemann, “Epitaxially grown monoisotopic Si, Ge, and Si$_{1-x}$Ge$_{x}$ alloy layers: production and some properties”, Fizika i Tekhnika Poluprovodnikov, 50:3 (2016), 350–353 ; Semiconductors, 50:3 (2016), 345–348 |
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2009 |
| 5. |
B. A. Andreev, A. A. Ezhevskii, N. V. Abrosimov, P. G. Sennikov, H. Pol, “Dependence of the energy of the resonance states of an acceptor in silicon on the host isotopic mass”, Pis'ma v Zh. Èksper. Teoret. Fiz., 90:6 (2009), 501–504 ; JETP Letters, 90:6 (2009), 455–458   |
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