anomalous Hall effect, disordered structures, magnetorisistance, memristive effect
UDC:
, 537.9
Subject:
anomalous Hall effect, disordered structures, magnetorisistance, memristive effect
Main publications:
V.V. Rylkov, S.N. Nikolaev, K.Yu. Chernoglazov, V.A. Demin, A.V. Sitnikov, M.Yu. Presnyakov, A.L. Vasiliev, N.S. Perov, A.S. Vedeneev, Yu.E. Kalinin, V.V. Tugushev, A.B. Granovsky, “Tunneling anomalous Hall effect in the nanogranular CoFe-B-Al-O films near the metal-insulator transition”, Phys. Rev. B, 95:14 (2017), 144202
V. Rylkov, A. Sitnikov, S. Nikolaev, A. Emelyanov, K. Chernohlazov, K. Nikiruy, A. Drovosekov, M. Blinov, E. Fadeev, A. Taldenkov, V. Demin, A. Vedeneev, A. Bugaev, A. Granovsky, “Properties of Nanocomposites With Different Concentrations of Magnetic Ions in an Insulating Matrix”, IEEE MAGNETICS LETTERS, 10 (2019), 2509504
N. K. Chumakov, A. A. Andreev, I. V. Belov, A. B. Davydov, I. S. Ezubchenko, L. L. Lev, L. A. Morgun, S. N. Nikolaev, I. A. Chernykh, S. Yu. Shabanov, V. N. Strokov, V. G. Valeyev, “Magnetoresistance and symmetry of a two-dimensional electron gas in AlGaN/AlN/GaN heterostructures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 119:8 (2024), 598–603; JETP Letters, 119:8 (2024), 604–609
2023
2.
S. N. Nikolaev, K. Yu. Chernoglazov, A. V. Emelyanov, A. V. Sitnikov, A. N. Taldenkov, T. D. Patsaev, A. L. Vasil'ev, E. A. Gan'shina, V. A. Demin, N. S. Averkiev, A. B. Granovskii, V. V. Ryl'kov, “Anomalous behavior of the tunneling magnetoresistance in (CoFeB)$_x$(LiNbO$_3$)$_{100-x}$/Si nanocomposite film structures below the percolation threshold: manifestations of the cotunneling and exchange effects”, Pis'ma v Zh. Èksper. Teoret. Fiz., 118:1 (2023), 46–54; JETP Letters, 118:1 (2023), 58–66
A. B. Drovosekov, N. M. Kreines, A. S. Barkalova, S. N. Nikolaev, A. V. Sitnikov, V. V. Rylkov, “Effect of slow ion relaxation at ferromagnetic resonance in a CoFeB–LiNbO metal-insulator nanocomposite”, Pis'ma v Zh. Èksper. Teoret. Fiz., 112:2 (2020), 88–92; JETP Letters, 112:2 (2020), 84–87
S. N. Nikolaev, A. V. Emelyanov, R. G. Chumakov, V. V. Ryl'kov, A. V. Sitnikov, M. Y. Presniakov, E. V. Kukueva, V. A. Demin, “The properties of memristive structures based on (Co$_{40}$Fe$_{40}$B$_{20}$)$_{x}$(LiNbO$_{3}$)$_{100-x}$, nanocomposites synthesized on SiO$_{2}$/Si substrates”, Zhurnal Tekhnicheskoi Fiziki, 90:2 (2020), 257–263; Tech. Phys., 65:2 (2020), 243–249
A. B. Drovosekov, A. O. Savitsky, N. M. Kreines, V. V. Ryl'kov, S. N. Nikolaev, K. Yu. Chernoglazov, A. N. Taldenkov, E. A. Cherebylo, V. A. Mikhalevskii, O. A. Novodvorskii, K. I. Maslakov, P. Pandey, Sh. Zhou, “Effect of laser fluence on magnetic properties of thin Mn$_{x}$Si$_{1-x}$ ($x\approx$ 0.5) films prepared by pulsed laser deposition”, Fizika Tverdogo Tela, 60:11 (2018), 2147–2151; Phys. Solid State, 60:11 (2018), 2188–2193
O. A. Novodvorskii, V. A. Mikhalevskii, D. S. Gusev, A. A. Lotin, L. S. Parshina, O. D. Khramova, E. A. Cherebylo, A. B. Drovosekov, V. V. Ryl'kov, S. N. Nikolaev, K. Yu. Chernoglazov, K. I. Maslakov, “Modification of the ferromagnetic properties of Si$_{1-x}$Mn$_{x}$ thin films synthesized by pulsed laser deposition with a variation in the buffer-gas pressure”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1313–1316; Semiconductors, 52:11 (2018), 1424–1427
A. S. Vedeneev, V. V. Rylkov, K. S. Napolskii, A. P. Leontiev, A. A. Klimenko, A. M. Kozlov, V. A. Luzanov, S. N. Nikolaev, M. P. Temiryazeva, A. S. Bugaev, “Effects of electron drag of gold in pores of anodic aluminum oxide: Reversible resistive switching in a chain of point contacts”, Pis'ma v Zh. Èksper. Teoret. Fiz., 106:6 (2017), 387–391; JETP Letters, 106:6 (2017), 411–415
V. V. Ryl'kov, S. N. Nikolaev, K. Yu. Chernoglazov, B. A. Aronzon, K. I. Maslakov, V. V. Tugushev, E. T. Kulatov, I. A. Likhachev, È. M. Pashaev, A. S. Semisalova, N. S. Perov, A. B. Granovskii, E. A. Gan'shina, O. A. Novodvorskii, O. D. Khramova, E. V. Khaidukov, V. Ya. Panchenko, “High-temperature ferromagnetism in Si$_{1-x}$ Mn$_x$$(x\approx 0.5)$ nonstoichiometric alloys”, Pis'ma v Zh. Èksper. Teoret. Fiz., 96:4 (2012), 272–280; JETP Letters, 96:4 (2012), 255–262
S. N. Nikolaev, B. A. Aronzon, V. V. Ryl'kov, V. V. Tugushev, E. S. Demidov, S. A. Levchuk, V. P. Lesnikov, V. V. Podol'skii, R. R. Gareev, “Anomalous Hall effect in highly Mn-Doped silicon films”, Pis'ma v Zh. Èksper. Teoret. Fiz., 89:12 (2009), 707–712; JETP Letters, 89:12 (2009), 603–608
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