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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2009, Volume 89, Issue 12, Pages 707–712
(Mi jetpl451)
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This article is cited in 13 scientific papers (total in 13 papers)
CONDENSED MATTER
Anomalous Hall effect in highly Mn-Doped silicon films
S. N. Nikolaeva, B. A. Aronzonab, V. V. Ryl'kovab, V. V. Tugusheva, E. S. Demidovc, S. A. Levchukc, V. P. Lesnikovc, V. V. Podol'skiic, R. R. Gareevd a Russian Research Centre "Kurchatov Institute"
b Institute for Theoretical and Applied Electromagnetics, Russian Academy of Sciences
c Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University
d Institute of Experimental and Applied Physics, University of Regensburg, 93040 Regensburg, Germany
Abstract:
The transport and magnetic properties of Mn x Si1 − x films with a high (x ≈ 0.35) content of Mn produced by laser deposition at growth temperatures of 300–350°C have been studied in a temperature range of 5–300 K in magnetic fields of up to 2.5 T. The films exhibit a hole-type metallic conductivity and a relatively weak change of magnetization in a temperature range of 50–200 K. An anomalous Hall effect with an essentially hysteretic behavior from 50 K up to ≈230 K has been discovered. The properties of the films are explained by the two-phase model, in which ferromagnetic clusters containing interstitial Mn ions with a localized magnetic moment are embedded in the matrix of a weak band MnSi2 − x (x ≈ 0.3) type ferromagnet with delocalized spin density.
Received: 29.04.2009
Citation:
S. N. Nikolaev, B. A. Aronzon, V. V. Ryl'kov, V. V. Tugushev, E. S. Demidov, S. A. Levchuk, V. P. Lesnikov, V. V. Podol'skii, R. R. Gareev, “Anomalous Hall effect in highly Mn-Doped silicon films”, Pis'ma v Zh. Èksper. Teoret. Fiz., 89:12 (2009), 707–712; JETP Letters, 89:12 (2009), 603–608
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https://www.mathnet.ru/eng/jetpl451 https://www.mathnet.ru/eng/jetpl/v89/i12/p707
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Abstract page: | 394 | Full-text PDF : | 205 | References: | 37 |
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