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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
A. F. Zinovieva, V. A. Zinovyev, A. V. Nenashev, A. A. Shklyaev, L. V. Kulik, A. V. Dvurechenskii, “Electron spin resonance in heterostructures with ring molecules of GeSi quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 113:1 (2021), 58–62   ; JETP Letters, 113:1 (2021), 52–56   |
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2020 |
| 2. |
D. A. Pokhabov, A. G. Pogosov, E. Yu. Zhdanov, A. K. Bakarov, A. A. Shklyaev, “Double-channel electron transport in suspended quantum point contacts with in-plane side gates”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1344–1349 ; Semiconductors, 54:12 (2020), 1605–1610 |
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2019 |
| 3. |
A. A. Shevyrin, A. K. Bakarov, A. A. Shklyaev, A. S. Arakcheev, M. Kurosu, H. Yamaguchi, A. G. Pogosov, “On-chip piezoelectric actuation of nanomechanical resonators containing a two-dimensional electron gas”, Pis'ma v Zh. Èksper. Teoret. Fiz., 109:4 (2019), 254–255 ; JETP Letters, 109:4 (2019), 261–265 |
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2017 |
| 4. |
G. K. Krivyakin, V. A. Volodin, A. A. Shklyaev, V. Mortet, J. More-Chevalier, P. Ashcheulov, Z. Remes, T. H. Stuchliková, J. Stuchlik, “Formation and study of $p$–$i$–$n$ structures based on two-phase hydrogenated silicon with a germanium layer in the $i$-type region”, Fizika i Tekhnika Poluprovodnikov, 51:10 (2017), 1420–1425 ; Semiconductors, 51:10 (2017), 1370–1376 |
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2011 |
| 5. |
O. E. Tereshchenko, K. A. Kokh, V. V. Atuchin, K. N. Romanyuk, S. V. Makarenko, V. A. Golyashov, A. S. Kozhukhov, I. P. Prosvirin, A. A. Shklyaev, “Stability of the (0001) surface of the Bi$^2$Se$^3$ topological insulator”, Pis'ma v Zh. Èksper. Teoret. Fiz., 94:6 (2011), 500–503 ; JETP Letters, 94:6 (2011), 465–468 |
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| 6. |
A. A. Shklyaev, K. N. Romanyuk, A. V. Latyshev, A. V. Arzhannikov, “Effect of dislocations on the shape of islands during silicon growth on the oxidized Si(111) surface”, Pis'ma v Zh. Èksper. Teoret. Fiz., 94:6 (2011), 477–480 ; JETP Letters, 94:6 (2011), 442–445 |
6
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| 7. |
K. N. Romanyuk, A. A. Shklyaev, B. Z. Olshanetsky, A. V. Latyshev, “Formation of Ge clusters at a Si(111)-Bi-$\sqrt{3}\times\sqrt{3}$ surface”, Pis'ma v Zh. Èksper. Teoret. Fiz., 93:11 (2011), 740–745 ; JETP Letters, 93:11 (2011), 661–666 |
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2008 |
| 8. |
A. A. Shklyaev, M. Ichikawa, “Extremely dense arrays of germanium and silicon nanostructures”, UFN, 178:2 (2008), 139–169 ; Phys. Usp., 51:2 (2008), 133–161 |
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2006 |
| 9. |
A. A. Shklyaev, M. Ichikawa, “Fabrication of germanium and silicon nanostructures using a scanning tunneling microscope”, UFN, 176:9 (2006), 913–930 ; Phys. Usp., 49:9 (2006), 887–903 |
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