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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2011, Volume 94, Issue 6, Pages 500–503
(Mi jetpl2033)
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This article is cited in 23 scientific papers (total in 23 papers)
CONDENSED MATTER
Stability of the (0001) surface of the Bi$^2$Se$^3$ topological insulator
O. E. Tereshchenkoab, K. A. Kokhc, V. V. Atuchinb, K. N. Romanyukab, S. V. Makarenkoa, V. A. Golyashova, A. S. Kozhukhovba, I. P. Prosvirind, A. A. Shklyaevab a Novosibirsk State University
b A. V. Rzhanov Institute of Semiconductor Physics of SB RAS, Novosibirsk
c Sobolev Institute of Geology and Mineralogy, Siberian Branch of the Russian Academy of Sciences, Novosibirsk
d Boreskov Institute of Catalysis SB RAS, Novosibirsk
Abstract:
The inertness of the cleaved (0001) surface of a Bi$_{2}$Se$_{3}$ single crystal to oxidation has been demonstrated using X-ray photoelectron spectroscopy, as well as atomic-force and scanning tunneling microscopy and spectroscopy. No intrinsic bismuth and selenium oxides are formed on the surface after a month of storage in air. Atomically flat surfaces with macroscopic sizes (${\sim}\,1\,$cm$^2$) and rms roughness less than $0.1$ nm have been prepared, and (1$\times$1)-(0001) Bi$_{2}$Se$_{3}$ atomic structure has been resolved. The tunneling conductance measurements have shown that the energy dependence of the surface density of states is quasilinear in the band gap of Bi$_{2}$Se$_{3}$.
Received: 09.08.2011
Citation:
O. E. Tereshchenko, K. A. Kokh, V. V. Atuchin, K. N. Romanyuk, S. V. Makarenko, V. A. Golyashov, A. S. Kozhukhov, I. P. Prosvirin, A. A. Shklyaev, “Stability of the (0001) surface of the Bi$^2$Se$^3$ topological insulator”, Pis'ma v Zh. Èksper. Teoret. Fiz., 94:6 (2011), 500–503; JETP Letters, 94:6 (2011), 465–468
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https://www.mathnet.ru/eng/jetpl2033 https://www.mathnet.ru/eng/jetpl/v94/i6/p500
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Abstract page: | 336 | Full-text PDF : | 114 | References: | 57 |
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