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Publications in Math-Net.Ru |
Citations |
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2021 |
1. |
F. F. Komarov, S. B. Lastovsky, I. A. Romanov, I. N. Parkhomenko, L. A. Vlasukova, G. D. Ivlev, Y. Berencen, A. A. Tsivako, N. S. Koval'chuk, E. Wendler, “Te-hyperdoped silicon layers for visible-to-infrared photodiodes”, Zhurnal Tekhnicheskoi Fiziki, 91:12 (2021), 2026–2037 |
2. |
F. F. Komarov, I. D. Parfimovich, A. G. Tkachev, A. V. Shchegolkov, A. V. Shchegolkov, O. V. Milchanin, V. Bondarev, “Effect of methods for fabrication of polymer composites with carbon nanotubes on conduction processes”, Zhurnal Tekhnicheskoi Fiziki, 91:3 (2021), 475–483 |
3. |
F. F. Komarov, I. A. Romanov, L. A. Vlasukova, I. N. Parkhomenko, A. A. Tsivako, N. S. Koval'chuk, “Resistive switching effect of the structure based on silicon nitride”, Zhurnal Tekhnicheskoi Fiziki, 91:1 (2021), 139–144 ; Tech. Phys., 66:1 (2021), 133–138 |
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4. |
F. F. Komarov, I. N. Parkhomenko, O. V. Milchanin, G. D. Ivlev, L. A. Vlasukova, Yu. Żuk, A. A. Tsivako, N. S. Koval'chuk, “Effect of pulsed laser annealing on optical properties of selenium-hyperdoped silicon”, Optics and Spectroscopy, 129:8 (2021), 1037–1047 ; Optics and Spectroscopy, 129:10 (2021), 1114–1124 |
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2020 |
5. |
G. D. Ivlev, V. A. Zaikov, I. M. Klimovich, F. F. Komarov, O. R. Lyudchik, “Nanosecond action of intensive laser radiation on thin TiAlN films”, Optics and Spectroscopy, 128:1 (2020), 144–150 ; Optics and Spectroscopy, 128:1 (2020), 141–147 |
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2018 |
6. |
D. O. Murzalinov, L. A. Vlasukova, I. N. Parkhomenko, F. F. Komarov, А. Т. Akylbekov, A. V. Mudryi, , Sh. G. Giniyatova, А. К. Dauletbekova, “The photoluminescence of nitrogen-implanted silicon nitride films”, Bulletin of the L.N. Gumilyov Eurasian National University. Physics. Astronomy Series, 122:1 (2018), 68–73 |
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2017 |
7. |
F. F. Komarov, “Nano- and microstructuring of solids by swift heavy ions”, UFN, 187:5 (2017), 465–504 ; Phys. Usp., 60:5 (2017), 435–471 |
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2016 |
8. |
F. F. Komarov, S. V. Konstantinov, V. E. Strel'nitskii, V. V. Pilko, “Effect of Helium ion irradiation on the structure, the phase stability, and the microhardness of TiN, TiAlN, and TiAlYN nanostructured coatings”, Zhurnal Tekhnicheskoi Fiziki, 86:5 (2016), 57–63 ; Tech. Phys., 61:5 (2016), 696–702 |
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2003 |
9. |
F. F. Komarov, “Defect and track formation in solids irradiated by superhigh-energy ions”, UFN, 173:12 (2003), 1287–1318 ; Phys. Usp., 46:12 (2003), 1253–1282 |
107
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10. |
A. R. Chelyadinskii, F. F. Komarov, “Defect-impurity engineering in implanted silicon”, UFN, 173:8 (2003), 813–846 ; Phys. Usp., 46:8 (2003), 789–820 |
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1997 |
11. |
O. I. Velichko, F. F. Komarov, N. M. Lukanov, A. N. Muchynski, N. L. Prohorenko, V. A. Tsurko, “Simulation of impurity diffusion during thermal annealing in the polysilicon-silicon system”, Matem. Mod., 9:5 (1997), 68–76 |
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1992 |
12. |
Y. I. Dudchik, F. F. Komarov, Y. A. Konstantinov, “EMISSION LOSSES IN THIN-FILM GAMMA-WAVE-GUIDES”, Zhurnal Tekhnicheskoi Fiziki, 62:8 (1992), 110–116 |
13. |
A. P. Novikov, G. A. Gusakov, F. F. Komarov, V. P. Tolstykh, “О механизме ионно-индуцированной кристаллизации в кремнии”, Fizika i Tekhnika Poluprovodnikov, 26:10 (1992), 1841–1844 |
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1991 |
14. |
Y. I. Dudchik, F. F. Komarov, M. A. Kumakhov, D. G. Lobotskii, V. S. Solovev, V. S. Tishkov, “STUDY OF THE TRANSMISSION OF MULTILAYERED THIN-FILM X-RAY GUIDES”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:13 (1991), 82–86 |
15. |
Y. I. Dudchik, F. F. Komarov, Y. A. Konstantinov, “GAMMA-WAVE GUIDE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:6 (1991), 45–49 |
16. |
A. F. Burenkov, F. F. Komarov, S. A. Fedotov, “FLUCTUATIONS OF ION CHARGE STATES - POSSIBLE REASON FOR INCREASE OF
SHOOT DISPERSION UNDER HIGH-ENERGY IONIC IMPLANTATION”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:5 (1991), 69–72 |
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1990 |
17. |
A. F. Burenkov, F. F. Komarov, S. A. Fedotov, “MODEL OF BORON ION CHANNELING UNDER THE HIGH-ENERGY ION ALLOYING OF
SILICON-CRYSTALS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:23 (1990), 4–8 |
18. |
Y. I. Dudchik, F. F. Komarov, M. A. Kumakhov, D. G. Lobotskii, V. S. Solovev, V. S. Tishkov, “USE OF MULTILAYERED STRUCTURES AS A TARGET FOR THE GENERATION OF X-RAY
QUANTUM COLLIMATED BEAMS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:15 (1990), 43–47 |
19. |
Y. I. Dudchik, F. F. Komarov, V. S. Solovev, V. S. Tishkov, “POTENTIALITY OF THE CONSTRUCTION OF X-RAY-RADIATION SOURCES BASED ON THE
COMPLETE EXTERNAL REFLECTION EFFECT”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:1 (1990), 57–61 |
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1989 |
20. |
I. A. Bachilo, R. V. Gribkovskii, F. F. Komarov, V. A. Mironenko, A. P. Novikov, “FORMATION OF BETA-SI3N4 HIDDEN LAYER UNDER HIGHLY EFFICIENT ION
IRRADIATION (HII) OF SILICONE”, Zhurnal Tekhnicheskoi Fiziki, 59:1 (1989), 200–202 |
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1988 |
21. |
A. F. Burenkov, F. F. Komarov, “HIGH-ENERGY ION-IMPLANTATION”, Zhurnal Tekhnicheskoi Fiziki, 58:3 (1988), 559–566 |
22. |
F. F. Komarov, A. P. Novikov, S. A. Petrov, “FORMATION OF TWINS AND HEXAGONAL MODIFICATION IN SILICON UNDER THE
RADIATION WITH INTENSIVE AR+ ION-BEAMS”, Zhurnal Tekhnicheskoi Fiziki, 58:3 (1988), 548–551 |
23. |
A. F. Burenkov, Y. I. Dudchik, F. F. Komarov, “RADIATION UNDER CHANNELING ELECTRONS WITH 16.9, 30.5, 54.5-MU-U ENERGY
IN DIAMOND”, Zhurnal Tekhnicheskoi Fiziki, 58:1 (1988), 195–197 |
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1987 |
24. |
A. S. Kamyshan, F. F. Komarov, F. P. Korshunov, A. P. Lazar, “Experimental investigation of X-ray radiation spectra under fast electron channeling in silicon”, Dokl. Akad. Nauk SSSR, 294:2 (1987), 339–342 |
25. |
F. F. Komarov, E. V. Kotov, A. V. Pogrebnyakov, “Implanted nitrogen-induced phase transformation in niobium layers and the superconducting properties of $\mathrm{Nb}$–$\mathrm{N}$ system”, Fizika Tverdogo Tela, 29:6 (1987), 1660–1664 |
26. |
F. F. Komarov, E. V. Kotov, A. P. Novikov, S. A. Petrov, T. T. Samoilyuk, “Residual Defects in Silicon under Implantation of As$^{+}$ Ions in the Self-Annealing Mode”, Fizika i Tekhnika Poluprovodnikov, 21:10 (1987), 1863–1867 |
27. |
P. A. Aleksandrov, E. K. Baranova, K. D. Demakov, A. S. Ignat'ev, F. F. Komarov, A. P. Novikov, “Study of the Formation of $\beta$-SiC Monocrystalline Layers on Si by the Method of Highly Intense Ionic Doping”, Fizika i Tekhnika Poluprovodnikov, 21:5 (1987), 920–922 |
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1986 |
28. |
F. F. Komarov, A. F. Komarov, ““Projector” effect in the Kumakhov radiation”, Dokl. Akad. Nauk SSSR, 289:3 (1986), 603–605 |
29. |
F. F. Komarov, B. I. Pleshchinskii, A. V. Shtanin, “Определение оптимального режима разработки неоднородного по толщине участка нефтяного
месторождения”, Issled. Podzemn. Gidromekh., 8 (1986), 84–91 |
30. |
F. F. Komarov, A. P. Novikov, I. A. Radishevskii, T. T. Samoilyuk, V. P. Tolstykh, “Annealing of Defects and Electric Activation of Impurity in the Process of Highly Intensive Ionic Doping of Silicon”, Fizika i Tekhnika Poluprovodnikov, 20:9 (1986), 1726–1728 |
31. |
P. A. Aleksandrov, E. K. Baranova, K. D. Demakov, F. F. Komarov, A. P. Novikov, S. Yu. Shiryaev, “Synthesis of Monocrystalline Silicon Carbide by Single-Step Equipment of Highly Intense Ion Doping”, Fizika i Tekhnika Poluprovodnikov, 20:1 (1986), 149–152 |
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1985 |
32. |
F. F. Komarov, A. F. Komarov, “FLOODLIGHTING EFFECT IN KUMAKHOV RADIATION”, Zhurnal Tekhnicheskoi Fiziki, 55:11 (1985), 2230–2232 |
33. |
A. F. Burenkov, F. F. Komarov, Yu. I. Dudchik, “BROADENING THE SPONTANEOUS RADIATION LINES DURING ELECTRON PLANAR
CHANNELING”, Zhurnal Tekhnicheskoi Fiziki, 55:11 (1985), 2184–2190 |
34. |
V. S. Andreev, S. B. Efimov, F. F. Komarov, A. P. Novikov, T. T. Samoiluk, V. S. Solov'ev, S. Yu. Shiryaev, “Crystallization and the effect of the annealing macrodefects during the process of high dense ionic implantation of semiconducting crystals”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:18 (1985), 1110–1113 |
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1984 |
35. |
F. F. Komarov, N. V. Moroshkin, “POSSIBILITY OF FLUCTUATION FORMATION OF AMORPHOUS BASE DURING ION METAL
ALLOYING”, Zhurnal Tekhnicheskoi Fiziki, 54:9 (1984), 1836–1837 |
36. |
F. F. Komarov, “IONIZATION CROSS-SECTION OF INNER ELECTRONS IN MODELS OF RELATIVISTIC
BINARY IMPACT”, Zhurnal Tekhnicheskoi Fiziki, 54:8 (1984), 1465–1471 |
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1983 |
37. |
F. F. Komarov, V. I. Telegin, M. Kh. Khokonov, “An anomaly in the Kumakhov radiation temperature dependence at axial channeling of electrons”, Dokl. Akad. Nauk SSSR, 272:2 (1983), 346–349 |
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1982 |
38. |
F. F. Komarov, “On the method of electron density determination in crystals by the $\delta$-electron yield”, Dokl. Akad. Nauk SSSR, 263:5 (1982), 1123–1125 |
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